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Observation of giant spin–orbit interaction in graphene and heavy metal heterostructures

机译：石墨烯和重金属异质结构中巨自旋轨道相互作用的观察

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Graphene is a promising material demonstrating some interesting phenomena such as the spin Hall effect, bipolar transistor effect, and non-trivial topological states. However, graphene has an intrinsically small spin–orbit interaction (SOI), making it difficult to apply in spintronic devices. The electronic band structure of graphene makes it possible to develop a systematic method to enhance SOI extrinsically. In this study, we designed a graphene field-effect transistor with a Pb layer intercalated between graphene (Gr) and Au layers and studied the effect on the strength of the SOI. The SOI in our system was significantly increased to 80 meV, which led to a giant non-local signal (～180 Ω) at room temperature due to the spin Hall effect. Further, we extract key parameters of spin transport from the length and width dependence of non-local measurement. To support these findings, we also measured the temperature and gate-dependent weak localization (WL) effect. We obtained the magnitude of the SOI and spin relaxation time of Gr via quantitative analysis of WL. The SOI magnitudes estimated from the non-local signal and the WL effect are close in value. The enhancement of the SOI of Gr at room temperature is a potential simple manipulation method to explore the use of this material for spin-based applications.
机译：石墨烯是一种有前途的材料，它展示了一些有趣的现象，例如自旋霍尔效应，双极晶体管效应和非平凡的拓扑状态。但是，石墨烯本质上具有很小的自旋-轨道相互作用（SOI），因此很难应用于自旋电子器件中。石墨烯的电子带结构使得有可能开发一种系统的方法来外在地增强SOI。在这项研究中，我们设计了一种石墨烯场效应晶体管，其Pb层插在石墨烯（Gr）和Au层之间，并研究了其对SOI强度的影响。我们系统中的SOI显着增加到80 meV，由于自旋霍尔效应，在室温下导致了巨大的非本地信号（〜180Ω）。此外，我们从非局部测量的长度和宽度依赖性中提取自旋运输的关键参数。为了支持这些发现，我们还测量了温度和门相关的弱局部化（WL）效应。通过对WL的定量分析，我们获得了SOI的大小和Gr的自旋弛豫时间。从非本地信号估计的SOI大小与WL效应的值接近。在室温下提高Gr的SOI是一种潜在的简单操作方法，可以探索这种材料在基于旋转的应用中的用途。

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