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Thermoelectric properties of n-type Cu4Sn7S16-based compounds

机译：n型基于Cu4Sn7S16的化合物的热电性能

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Copper-based chalcogenides have ultralow thermal conductivity and ultrahigh thermoelectric performance, but most of them are p-type semiconductors. It is urgent to develop n-type counterparts for high efficiency thermoelectric modules based on these copper based-chalcogenides. Cu _(4) Sn _(7) S _(16) is an intrinsically n-type semiconductor with complex crystal structure and low thermal conductivity. However, its thermoelectric properties have not been well studied when compared to the well-known n-type CuFeS _(2) . In this work, high-quality Cu _(4) Sn _(7) S _(16) -based compounds are fabricated and their thermoelectric properties are systematically studied. Using Ag and Sb as dopants, the carrier concentration is tuned over a wide range. The electrical transport properties can be well described by the single parabolic band model with carrier acoustic phonons scattering. It is revealed that Cu _(4) Sn _(7) S _(16) exhibits a low effective mass and relatively high mobility. The thermal conductivity is lower than 0.8?W m ~(?1) K ~(?1) from 300 to 700 K and shows a weak dependence on temperature. A maximum zT of 0.27 is obtained in Cu _(3.97) Ag _(0.03) Sn _(7) S _(16) at 700 K. Further enhancement of thermoelectric performance is possible when a more efficient n-type dopant is used.
机译：铜基硫族化物具有超低的热导率和超高的热电性能，但大多数为p型半导体。迫切需要开发基于这些基于铜的硫族化物的高效热电模块的n型对应物。 Cu _（4）Sn _（7）S _（16）是本质上为n型的半导体，具有复杂的晶体结构和低的热导率。但是，与众所周知的n型CuFeS_（2）相比，其热电性能尚未得到很好的研究。在这项工作中，制造高质量的Cu _（4）Sn _（7）S _（16）基化合物并对其热电性能进行了系统的研究。使用Ag和Sb作为掺杂剂，可以在很宽的范围内调整载流子浓度。可以通过带有载波声子散射的单抛物线带模型很好地描述电传输特性。揭示了Cu _（4）Sn _（7）S _（16）具有较低的有效质量和相对较高的迁移率。导热系数在300至700 K之间低于0.8？W m〜（？1）K〜（？1），并且对温度的依赖性较弱。在700 K下，Cu _（3.97）Ag _（0.03）Sn _（7）S _（16）的最大zT为0.27。当使用更有效的n型掺杂剂时，热电性能可能会进一步提高。

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