Photoluminescence of PdS2 and PdSe2 quantum dots

Xinyu Wang; Wayesh Qarony; Ping Kwong Cheng; Mohammad Ismail; Yuen Hong Tsang

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Photoluminescence of PdS2 and PdSe2 quantum dots

机译：PdS2和PdSe2量子点的光致发光

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Group-10 transition metal dichalcogenide (TMD) materials have recently attracted considerable attention in optoelectronics applications. However, so far their quantum dot (QD) counterparts with photoluminescence (PL) nature still remain to be revealed. In this study, 2 typical types of group-10 TMD material (PdS _(2) and PdSe _(2) ) QDs are fabricated via liquid exfoliation using N -methyl-2-pyrrolidone (NMP) solvent. The absorption and PL spectra of these QD solutions are studied, exhibiting excitation wavelength-dependent behaviors and large Stokes shifts. Furthermore, the quantum yield and decay lifetime are also investigated and analyzed. The obtained results suggest promising optoelectronic applications with group-10 TMD QDs in the future.

机译：近来，第10组过渡金属二硫化碳（TMD）材料在光电应用中引起了相当大的关注。但是，到目前为止，它们具有光致发光（PL）性质的量子点（QD）对应物仍有待揭示。在这项研究中，使用N-甲基-2-吡咯烷酮（NMP）溶剂通过液体剥离制造了2种典型的10组TMD材料（PdS _（2）和PdSe _（2））QD。研究了这些量子点溶液的吸收光谱和PL光谱，表现出与激发波长有关的行为和较大的斯托克斯位移。此外，还研究和分析了量子产率和衰变寿命。获得的结果表明，未来有10组TMD QD的光电子应用前景广阔。

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《RSC Advances》 |2019年第65期|共8页
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Xinyu Wang; Wayesh Qarony; Ping Kwong Cheng; Mohammad Ismail; Yuen Hong Tsang;
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1. Photoluminescence of PdS2 and PdSe2 quantum dots [J] . RSC Advances . 2019,第65期

机译：PDS2和PDSE2量子点的光致发光
2. Temperature-Dependent Photoluminescence of Cesium Lead Halide Perovskite Quantum Dots: Splitting of the Photoluminescence Peaks of CsPbBr3 and CsPb(Br/I)(3) Quantum Dots at Low Temperature [J] . Lee See Mak, Moon Cheol Joo, Lim Hyunseob, The journal of physical chemistry, C. Nanomaterials and interfaces . 2017,第46期

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3. Nearly suppressed photoluminescence blinking of small-sized, blue-green-orange-red emitting single CdSe-based core/gradient alloy shell/shell quantum dots: correlation between truncation time and photoluminescence quantum yield [J] . Roy Debjit, Mandal Saptarshi, De Chayan K., Physical chemistry chemical physics: PCCP . 2018,第15期

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4. Impact of Growth Rate Variabilities of Quantum Dots and Capping Layer on Photoluminescence of Epitaxially Grown InAs Quantum Dots [C] . Manas Ranjan Mantri, Debiprasad Panda, Sanowar Alam Gazi, Conference on Quantum Dots, Nanostructures, and Quantum Materials: Growth, Characterization, and Modeling . 2020

机译：量子点和盖层的生长速率变化对外延生长的InAs量子点光致发光的影响
5. Improving the photoluminescence quantum efficiency of size-tunable, solution-processed lead-sulfide quantum dots in film. [D] . Maria, Ahmed. 2004

机译：提高尺寸可调溶液中溶液处理的硫化铅量子点的光致发光量子效率。
6. Enhancement of Photoluminescence Quantum Yield and Stability in CsPbBr3 Perovskite Quantum Dots by Trivalent Doping [O] . Sujeong Jung, Jae Ho Kim, Jin Woo Choi, 2020

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7. Strain Modulated Electronic, Mechanical, and Optical Properties of the Monolayer PdS2, PdSe2, and PtSe2 for Tunable Devices [O] . Shuo Deng, Lijie Li, Yan Zhang 2018

机译：应变调制单层PDS2，PDSe2和Ptse2的电子，机械和光学性能用于可调谐装置
8. Collaborative Research and Development (CR&D). Delivery Order 0069: Photoluminescence Investigations on Semiconducting Quantum Dots Quantum Wells and Thin Films [R] . Ullrich, B. 2007

机译：协作研究与开发（CR＆D）。交货单0069：半导体量子点量子阱和薄膜的光致发光研究

Photoluminescence of PdS2 and PdSe2 quantum dots

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