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Annealing effect on UV-illuminated recovery in gas response of graphene-based NO2 sensors

机译:退火对基于石墨烯的NO2传感器气体响应中的紫外线照明恢复的影响

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The response and recovery of a graphene-based sensor for nitrogen dioxide (NO _(2) ) sensing is improved by a combination of two treatments including rapid thermal annealing (RTA) of graphene and UV illumination during the pump down period. A two-dimensional monolayer graphene grown by chemical vapor deposition was transferred to an arc-shape electrode and subsequently heated at temperatures from 200 to 400 °C for 1 min in N _(2) atmosphere by RTA to eliminate the chemical residues on the graphene generated in the transfer process. The effect of RTA and poly(methyl methacrylate) (PMMA) residues was investigated using Raman spectroscopy. The shift of the G and 2D bands could be due to graphene suffering from compressive strain and hole doping from the substrate enhanced by the RTA treatment. The hole doping effect was also observed from Hall measurements. Atomic force microscopy images confirm the PMMA residues and surface roughness reduction by the RTA treatment. Annealing at 300 °C enhances the NO _(2) sensing response at 1 ppm by 4 times compared to the pristine graphene without RTA. Full recovery of the sensor to the initial baseline could be achieved by the adjustment of UV illumination time.
机译:石墨烯基传感器用于二氧化氮(NO_(2))的响应和恢复通过两种处理的组合得到改善,包括在抽空期间进行石墨烯的快速热退火(RTA)和UV照射。将通过化学气相沉积法生长的二维单层石墨烯转移至弧形电极,然后在N _(2)气氛中通过RTA在200至400°C的温度下加热1分钟,以消除石墨烯上的化学残留物在传输过程中生成。使用拉曼光谱法研究了RTA和聚甲基丙烯酸甲酯(PMMA)残留物的影响。 G和2D谱带的移动可能是由于石墨烯遭受了压缩应变以及通过RTA处理增强了来自基板的空穴掺杂。从霍尔测量还观察到空穴掺杂效应。原子力显微镜图像证实了通过RTA处理后的PMMA残留物和表面粗糙度的降低。与不带RTA的原始石墨烯相比,在300°C的退火温度可使1 ppm的NO_(2)感应响应提高4倍。可以通过调整紫外线照射时间将传感器完全恢复到初始基线。

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