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Direct chemical vapor deposition synthesis of large area single-layer brominated graphene

机译：直接化学气相沉积法合成大面积单层溴化石墨烯

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Graphene and its derivatives such as functionalized graphene are considered to hold significant promise in numerous applications. Within that context, halogen functionalization is exciting for radical and nucleophilic substitution reactions as well as for the grafting of organic moieties. Historically, the successful covalent doping of sp ~(2) carbon with halogens, such as bromine, was demonstrated with carbon nanotubes. However, the direct synthesis of brominated graphene has thus far remained elusive. In this study we show how large area brominated graphene with C–Br bonds can be achieved directly ( i.e. a single step) using hydrogen rich low pressure chemical vapor deposition. The direct synthesis of brominated graphene could lead to practical developments.
机译：石墨烯及其衍生物，例如官能化石墨烯被认为在许多应用中具有重大前景。在这种情况下，卤素官能化对于自由基和亲核取代反应以及有机部分的接枝是令人兴奋的。历史上，用碳纳米管证明了sp〜（2）碳与卤素（如溴）的成功共价掺杂。然而，到目前为止，溴化石墨烯的直接合成仍然难以实现。在这项研究中，我们展示了如何使用富氢低压化学气相沉积法直接（即一步）实现具有C-Br键的大面积溴化石墨烯。溴化石墨烯的直接合成可能会导致实际的发展。

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