首页> 外文期刊>RSC Advances >β-Ga2O3 nanorod arrays with high light-to-electron conversion for solar-blind deep ultraviolet photodetection
【24h】

β-Ga2O3 nanorod arrays with high light-to-electron conversion for solar-blind deep ultraviolet photodetection

机译:具有高光电子转换能力的β-Ga2O3纳米棒阵列,用于日盲深紫外光检测

获取原文
           

摘要

Vertically aligned nanorod arrays (NRAs), with effective optical coupling with the incident light and rapid electron transport for photogenerated carriers, have attracted much interest for photoelectric devices. Herein, the monoclinic β-Ga _(2) O _(3) NRAs with an average diameter/length of 500 nm/1.287 μm were prepared by the hydrothermal and post-annealing method. Then a circular Ti/Au electrode was patterned on β-Ga _(2) O _(3) NRAs to fabricate solar-blind deep ultraviolet photodetectors. At zero bias, the device shows a photoresponsivity ( R _(λ) ) of 10.80 mA W ~(?1) and a photo response time of 0.38 s under 254 nm light irradiation with a light intensity of 1.2 mW cm ~(?2) , exhibiting a self-powered characteristic. This study presents a promising candidate for use in solar-blind deep ultraviolet photodetection with zero power consumption.
机译:垂直排列的纳米棒阵列(NRA)具有与入射光的有效光学耦合和对光生载流子的快速电子传输,已引起光电器件的极大兴趣。在此,通过水热和后退火方法制备了平均直径/长度为500nm /1.287μm的单斜β-Ga_(2)O _(3)NRA。然后,在β-Ga_(2)O _(3)NRA上对圆形的Ti / Au电极进行构图,以制造太阳盲型深紫外光电探测器。在零偏压下,该器件在254 nm光照射下,光强度为1.2 mW cm〜(?2)的条件下,显示的光响应度(R_(λ))为10.80 mA W〜(?1),光响应时间为0.38 s。 ),表现出自供电特性。这项研究提出了一种有前途的候选方法,可用于零功耗的太阳盲深紫外光电检测。

著录项

获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号