Monolayer MoSe _(2) is a transition metal dichalcogenide with a narrow bandgap, high optical absorbance and large spin-splitting energy, giving it great promise for applications in the field of optoelectronics. Producing monolayer MoSe _(2) films in a reliable and scalable manner is still a challenging task as conventional chemical vapor deposition (CVD) or exfoliation based techniques are limited due to the small domainsanosheet sizes obtained. Here, based on NaCl assisted CVD, we demonstrate the simple and stable synthesis of sub-millimeter size single-crystal MoSe _(2) monolayers with mobilities ranging from 38 to 8 cm ~(2) V ~(?1) s ~(?1) . The average mobility is 12 cm ~(2) V ~(?1) s ~(?1) . We further determine that the optical responsivity of monolayer MoSe _(2) is 42 mA W ~(?1) , with an external quantum efficiency of 8.22%.
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机译：单层MoSe _（2）是一种窄带隙，高光吸收率和大自旋分裂能的过渡金属二卤化硅，在光电子领域的应用前景广阔。以可靠和可扩展的方式生产单层MoSe_（2）膜仍然是一项艰巨的任务，因为由于获得的小区域/纳米片尺寸，传统的化学气相沉积（CVD）或基于剥离的技术受到限制。在这里，基于NaCl辅助CVD，我们演示了迁移率范围为38至8 cm〜（2）V〜（？1）s〜（的亚毫米大小的单晶MoSe _（2）单层单层的简单稳定的合成。 ？1）。平均迁移率为12 cm〜（2）V〜（？1）s〜（？1）。我们进一步确定单层MoSe _（2）的光学响应率为42 mA W〜（？1），外部量子效率为8.22％。
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