A new technique for the refractive index change with high-sensitivity measurements was proposed by the digital image of porous silicon (PSi) microarray utilization in this paper. Under the irradiation of a He-Ne laser, the surface images of the PSi array cells with the microcavity structure were obtained by the digital imaging equipment, whereas the refractive index change of each array cells was detected by calculating the average gray value of the image and the refractive index change measurement sensitivity was 10 ?4 . This technique could be utilized in the label-free and parallel detection of refraction index changes induced by a biological reaction in the microarray or the chip.
展开▼
