The reaction of H with solid thin films of C2H4 and C2H6 deposited on the silicon substrate at 13 K was studied using the thermal desorption method and Fourier transform-infrared (FT-IR) spectroscopy. In the reaction of H with C2H4, the formation of C2H6 as a major product and C4H10 as a minor one was observed. The high yield of C2H6 formed from the low-temperature tunneling reaction suggests the occurrence of efficient conversion of C2H4 into C2H6 on the cold dust grains. In the reaction of H with C2H6, no reaction products were detected, suggesting that the recombination reaction H + C2H5 → C2H6 prevails in the solid phase.
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机译：使用热解吸法和傅立叶变换红外光谱（FT-IR）研究了H与13 K下沉积在硅衬底上的C2H4和C2H6固体薄膜的反应。在H与C 2 H 4的反应中，观察到以C 2 H 6为主要产物而以C 4 H 10为次要产物的形成。由低温隧穿反应形成的高产率的C2H6暗示了在冷尘粒上C2H4有效转化为C2H6的发生。在H与C2H6的反应中，未检测到任何反应产物，这表明固相中普遍存在重组反应H + C2H5→C2H6。
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