We present a combined experimental and theoretical study on the formation processes and ionization energies of small organo-silicon molecules of the formula SiC2Hx (x?= 0, 1, 2). These organic molecules are considered important benchmark systems in understanding the formation of silicon- and carbon-bearing grains in the outflow of carbon stars. The studies identify four distinct (hydrogenated) silicon-carbon molecules together with their ionization energies: c-SiC2 [9.75?± 0.10?eV; 9.83?± 0.05?eV], l-HCCSi [7.00?± 0.05?eV], c-SiC2H [7.27?± 0.05?eV], and c-SiC2H2 [9.05?± 0.05?eV; 8.96?± 0.05?eV] with numbers in italics depicting computed data. Implications of these results to the non-equilibrium chemistry in shocked regions of circumstellar envelopes of carbon stars are also discussed.
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机译：我们提供了一个组合的实验和理论研究，研究了分子式为SiC2Hx（x？= 0，1，2）的有机硅小分子的形成过程和电离能。这些有机分子被认为是理解碳星流出中含硅和含碳晶粒形成的重要基准系统。研究确定了四个不同的（氢化的）硅碳分子及其电离能：c-SiC2 [9.75？±0.10？eV; 9.83≤±0.05≤eV]，1-HCCSi [7.00≤±0.05≤eV]，c-SiC 2 H [7.27≤±0.05≤eV]，c-SiC 2 H 2 [9.05≤±0.05≤eV]。 8.96？±0.05？eV]，斜体数字代表计算数据。还讨论了这些结果对碳星绕星包膜的受激区域中非平衡化学的影响。
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