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首页> 外文期刊>Procedia Computer Science >Modeling and Simulation of Junction Temperature Rise of GaN Devices for Class D Resonant Converters
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Modeling and Simulation of Junction Temperature Rise of GaN Devices for Class D Resonant Converters

机译：D类谐振转换器的GaN器件结温升高的建模与仿真

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Reliability of power electronic devices is related to their thermal performance. This paper presents the development of an electro-thermal model used to estimate junction temperature rise from self-heating effect in a GaN FET. Transient thermal impedances of the power device and the customized heat sink are extracted as a Foster thermal network before converting to a Cauer network to allow direct integration between multiple thermal networks. The proposed thermal impedance networks provide junction temperature information to the temperature-dependent SPICE model of the GaN FET so that self-heating effect is captured. The model is validated in SPICE simulation using a class D resonant converter as a case study. The results reveal the tendency of mismatch device temperature over a period of time posing a concern for the converter.
机译：功率电子设备的可靠性与其热性能有关。本文介绍了一种电热模型的开发，该模型用于根据GaN FET中的自热效应来估算结温的升高。在转换为Cauer网络以允许多个热网络之间直接集成之前，将功率设备和定制散热器的瞬态热阻抗提取为Foster热网络。拟议的热阻网络为GaN FET的温度相关SPICE模型提供结温信息，从而捕获自热效应。该模型在SPICE仿真中通过使用D类谐振转换器作为案例研究进行了验证。结果揭示了一段时间内器件温度不匹配的趋势，这是转换器需要考虑的问题。

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