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首页> 外文期刊>Bulletin of the American Physical Society >APS -2017 Annual Fall Meeting of the APS Ohio-Region Section - Event - Investigation of Room Temperature spontaneous emission in GeSn Alloys
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APS -2017 Annual Fall Meeting of the APS Ohio-Region Section - Event - Investigation of Room Temperature spontaneous emission in GeSn Alloys

机译:APS -2017 APS俄亥俄州地区分部年度秋季会议-活动-GeSn合金室温自发辐射的研究

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An integrated Si-based laser, as a major element of on chip optical system, is ideal for large-scale integration between electronic and photonic devices. Recent development of Ge and GeSn epitaxial growth on Si creates the possibility of engineering such devices. In this work, we study the emission of infrared radiation from waveguides fabricated from GeSn alloys grown on Si.Experimentally, by using standard UV photolithography and dry-etched in a Clplasma, our waveguides are fabricated from GeSn films grown epitaxially on Si(100)substrates. A 976nm wavelength solid-state laser optical-pump was applied onto the double-side polished waveguide at room temperature and the corresponding dependence of emission power was measured as a function of pump power. The results show strong nonlinear increasing dependence, indicating optical gain. Using a Fabry-Perot cavity, we found that the emission is incoherent. Additionally, we modeled the waveguide emission and compared it to the experimental data. The results show that the gain we observed is due to amplified spontaneous emission.
机译:作为片上光学系统的主要元件,集成的基于Si的激光器是电子和光子设备之间大规模集成的理想选择。 Ge和Si上外延生长Ge和GeSn的最新进展为工程化此类器件提供了可能性。在这项工作中,我们研究了由生长在Si上的GeSn合金制成的波导的红外辐射。通过实验,通过使用标准的UV光刻技术并在Clplasma中进行干蚀刻,我们的波导是由在Si(100)上外延生长的GeSn膜制成的基材。在室温下,将976nm波长的固态激光光学泵施加到双面抛光波导上,并测量相应的发射功率随泵浦功率的变化关系。结果表明强烈的非线性增加依赖性,表明光学增益。使用Fabry-Perot腔,我们发现发射是非相干的。此外,我们对波导发射进行了建模,并将其与实验数据进行了比较。结果表明,我们观察到的增益是由于放大的自发发射引起的。

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