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首页> 外文期刊>Bulletin of the American Physical Society >APS -2017 Annual Fall Meeting of the APS Ohio-Region Section - Event - Hyperdoped Silicon Characterization and Photodetectors
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APS -2017 Annual Fall Meeting of the APS Ohio-Region Section - Event - Hyperdoped Silicon Characterization and Photodetectors

机译：APS -2017 APS俄亥俄地区分部年度秋季会议-事件-超掺杂硅表征和光电探测器

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摘要

Hyperdoped silicon is a promising material for infrared detection. Supersaturated solutions of impurities in Si are produced in order to create intermediate bands (IBs) in between the valence and conduction bands. This new IB serves on sub-band gap absorption. Ion implantation followed by pulsed laser melting has been demonstrated as a method to produce concentrations of impurities in Si that are well above the solid solubility limit. In this work, we look at Si hyperdoped with Au or Ti.To achieve devices that could be commercialized for FPAs or other demanding applications, efficient ones will require significant optical absorption and high quality Ohmic contacts for carrier extraction. We fabricated Si layers hyperdoped with Au or Ti at varying concentrations, measured the optical absorption enhancement relative to Si, and attempted to form Ohmic contacts to the layers. The results show significant enhancement of optical absorption by increasing the implant dose. For making Ohmic contacts to hyperdoped materials, we tried several treatments, including boron or phosphorus shallow doping, rapid thermal annealing of contact, etching off the top metallic layer, and modifying the PLM process to suppress dopant segregation. Recipes for Ohmic contacts to each layer were demonstrated.
机译：超掺杂硅是用于红外检测的有前途的材料。产生了Si中杂质的过饱和溶液，以便在价带和导带之间创建中间带（IBs）。这种新的IB用于子带隙吸收。离子注入后进行脉冲激光熔化已被证明是一种在硅中产生远远高于固溶度极限的杂质浓度的方法。在这项工作中，我们研究了用Au或Ti超掺杂的Si。要实现可以商业化用于FPA或其他苛刻应用的器件，高效的器件将需要大量的光吸收和高质量的欧姆接触以提取载流子。我们制造了以不同浓度的Au或Ti超掺杂的Si层，测量了相对于Si的光吸收增强，并试图与这些层形成欧姆接触。结果表明，通过增加植入剂量，光吸收显着增强。为了与高掺杂材料进行欧姆接触，我们尝试了几种处理方法，包括硼或磷浅掺杂，接触器的快速热退火，蚀刻顶层金属层以及修改PLM工艺以抑制掺杂剂偏析。演示了欧姆接触每一层的方法。

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