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Eco-friendly graphene synthesis on Cu foil electroplated by reusing Cu etchants

机译：重复使用铜蚀刻剂在电镀铜箔上合成环保石墨烯

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Graphene film grown by chemical vapor deposition using Cu substrate is promising for industrial applications. After etching the Cu substrate, which is essential step in graphene transfer process, the etchant solution must be chemically treated to prevent water pollution. Here we investigated that a method of reusing Cu etchant used to synthesize graphene, the synthesis of graphene on the resulting reused Cu films (R-G), and the application of R-G to organic light-emitting diodes (OLEDs) and organic photovoltaic cells (OPVs). The turn-on voltage of OLEDs based on the R-G electrode was 4.2?V, and the efficiencies of OPVs based on the R-G electrode were 5.9–5.95%, that are similar to or better than those of the indium-tin-oxide-based devices. These results suggest that the reusing of Cu foil by the electroplating method could reduce the cost of graphene synthesis, thus opening a wide range of applications in graphene electronics.
机译：通过使用Cu衬底的化学气相沉积生长的石墨烯膜对于工业应用是有前途的。蚀刻铜基板（这是石墨烯转移过程中必不可少的步骤）后，必须对蚀刻液进行化学处理以防止水污染。在这里，我们研究了一种用于合成石墨烯的再利用铜蚀刻剂的方法，在所得再利用的铜膜（RG）上合成石墨烯以及将RG应用于有机发光二极管（OLED）和有机光伏电池（OPV）的方法。基于RG电极的OLED的开启电压为4.2？V，基于RG电极的OPV的效率为5.9–5.95％，与基于铟锡氧化物的OLED的效率相似或更好。设备。这些结果表明通过电镀方法重复使用铜箔可以降低石墨烯合成的成本，从而在石墨烯电子学中开辟了广泛的应用。

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