...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Scientific reports. >Extended π-conjugative n-p type homostructural graphitic carbon nitride for photodegradation and charge-storage applications
【24h】

Extended π-conjugative n-p type homostructural graphitic carbon nitride for photodegradation and charge-storage applications

机译：用于光降解和电荷存储应用的扩展π共轭n-p型同构石墨氮化碳

获取原文
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

An n-p type homostructural metal-free graphitic carbon nitride (g-Csub3/subNsub4/sub) semiconductor is designed and developed for pollutant abatement and energy storage application. The successful grafting of vibrio-like morphology-based g-Csub3/subNsub4/sub by 2, 5-Thiophenedicarboxylic acid (TDA) molecule and the development of amide-type linkage substantiated the prosperous uniting of g-Csub3/subNsub4/sub with organic TDA moiety is demonstrated. An extended π-conjugative TDA grafted g-Csub3/subNsub4/sub exhibited band gap tunability with broadband optical absorbance in the visible region. Mott-Schottky analysis exhibited the formation of n-p type homostructural property. As a result, obtained TDA grafted g-Csub3/subNsub4/sub has extended π-conjugation, high surface area and adequate separation of charge carriers. The change in the photocatalytic performance of grafted g-Csub3/subNsub4/sub is inspected for degradation of acid violet 7 (AV 7) dye under visible light irradiation. The charge storage capacity of grafted g-Csub3/subNsub4/sub was additionally assessed for supercapacitive behaviour. The charge capacitive studies of grafted g-Csub3/subNsub4/sub exhibited the areal capacitance of 163.17 mF cmsup-2/sup and robust cyclic stability of 1000 cycles with capacity retention of 83%.
机译：设计并开发了一种n-p型均质无金属石墨碳氮化物（g-C 3 N 4 ）半导体，用于污染物减排和能量存储应用。 2，5-噻吩二甲酸（TDA）分子成功接枝了基于弧菌样形态的gC 3 N 4 ，酰胺型连接的发展证实了繁荣证明了gC 3 N 4 与有机TDA部分的结合。扩展的π共轭TDA接枝的g-C 3 N 4 在可见光区具有带隙吸收和宽带吸光度。 Mott-Schottky分析显示出n-p型同构性质的形成。结果，获得的TDA接枝的g-C 3 N 4 具有扩展的π共轭，高表面积和足够的电荷载体分离。在可见光照射下，检查了接枝的g-C 3 N 4 的光催化性能的变化，以了解酸性紫7（AV 7）染料的降解情况。还评估了接枝的g-C 3 N 4 的电荷存储容量的超电容行为。接枝gC 3 N 4 的电荷电容研究显示其面积电容为163.17 mF cm -2 ，具有1000个循环的稳定循环稳定性保留率达83％。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号