• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Bulletin of the American Physical Society >APS -2017 Annual Fall Meeting of the APS Ohio-Region Section - Event - Hall Effect Studies of LPCVD grown $eta $-Ga$_{mathrm{2}}$O$_{mathrm{3}}$ on Sapphire
【24h】

APS -2017 Annual Fall Meeting of the APS Ohio-Region Section - Event - Hall Effect Studies of LPCVD grown $eta $-Ga$_{mathrm{2}}$O$_{mathrm{3}}$ on Sapphire

机译：APS -2017 APS俄亥俄州区域的年度秋季会议 - 赛事 - LPCVD Growlow $ eta $-$ _ {mathrm {2}} $ o $ _ {mathrm {3}} $ on sapphire

获取原文
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

With its ultra-wide bandgap of 4.5-4.9 eV and large breakdown electronic field, $eta $ - Ga$_{mathrm{2}}$O$_{mathrm{3}}$ has recently attracted attention because of its potential for next generation power electronics applications. The estimated breakdown field for $eta $ -Ga$_{mathrm{2}}$O$_{mathrm{3}}$ is 8 MV/cm, much larger than 2.5 MV/cm for 4H-SiC and 3.3 MV/cm for GaN, which could enable power electronics with larger power density and greater efficiency [1]. Also, Ga$_{mathrm{2}}$O$_{mathrm{3}}$ has the potential to be more cost-efficient in mass production than other wide bandgap materials due to its ability to be synthesized through standard melt growth methods [2]. With this motivation, this study examines the electronic properties of $eta $ - Ga$_{mathrm{2}}$O$_{mathrm{3}}$ via temperature dependent Hall effect measurements. Among several samples, the highest measured mobility was 34 cm2/Vs at room temperature and 40 cm2/Vs at 150K. These results indicate the potential of LPCVD grown Si-doped Ga$_{mathrm{2}}$O$_{mathrm{3}}$ for next generation semiconductor power electronics applications. [1] Applied Physics Letters 100, 013504 (2012) [2] Applied Physics Letters 103, 123511 (2013).
机译：凭借其超宽带隙4.5-4.9 EV和大型击穿电子领域，$ ETA $ - GA $ _ {MATHRM {2}} $ O $ _ {MATHRM {MATHRM {3}} $最近因其潜力而受到关注下一代电力电子应用。 $ eta $ -ga $ _ {mathrm {2}} $ o $ _ {mathrm {3}} $的估计分解字段为8 mv / cm，对于4h-sic和3.3 mV / 3.3 mV / CM for GaN，它可以使功率密度较大的电力电子设备和更高的效率[1]。此外，GA $ _ {MATHRM {2}} $ O $ _ {MATHRM {3}} $在批量生产上具有比其他宽带隙材料更具成本效益，因为它是通过标准熔体生长合成的能力方法[2]。通过这种动机，本研究审查了$ eta $ - ga $ _ {mathrm {2}} $ o $ _ {mathrm {3}} $通过温度依赖霍尔效应测量的电子特性。在几个样品中，在室温下最高测量的迁移率为34cm 2 / vs，在150k处为40cm 2 / vs。这些结果表明LPCVD生长的Si-掺杂GA $ _ {mathrm {2}} $ o $ _ {mathrm {3}} $的潜力为下一代半导体电源电子应用。 [1]应用物理信件100,013504（2012）[2]应用物理字母103,123511（2013）。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号