...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>ACS Omega >Layer-by-Layer Growth of Graphene on Insulator in CO2-Oxidizing Environment
【24h】

Layer-by-Layer Growth of Graphene on Insulator in CO2-Oxidizing Environment

机译：CO 2 - 氧化环境中绝缘体上石墨烯层的层逐层生长

获取原文
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Since the discovery of graphene by sticking and peeling scotch tape off graphite, it has also been prepared by other methods, such as thermal decomposition of SiC and chemical vapor deposition (CVD) with catalytic layer. Both the exfoliation and CVD methods impose to transfer the graphene layers on other insulating substrates for device applications. We reported that diamond grows in oxygen atmosphere ( Yoshimoto , M. ; Nature 1999 , 399 , 340?342) in which oxidative etching and depositing carbon compete under equivalent conditions. However, oxygen atmosphere is too intense for graphite growth. Although carbon dioxide (CO_(2)) is produced after hydrocarbon combustion, it can be a gentle and tender oxidant in certain situations. Here, we show the direct growth of graphene on insulating substrates in 100% CO_(2) environment and observe its layer-by-layer growth on the stepped edge of an insulating substrate. The direct growth can have a significant advantage of excluding the necessary process of transferring the graphene on the insulating substrate over other common methods.
机译：由于通过粘附和剥离透明胶带的石墨烯发现石墨烯，因此还通过其他方法制备，例如具有催化层的SiC和化学气相沉积（CVD）的热分解。剥离和CVD方法都施加在用于器件应用的其他绝缘基板上转移石墨烯层。我们报告说，钻石在氧气气氛中（Yoshimoto，M.;自然1999,399,340？342），其中氧化蚀刻和沉积碳在等效条件下竞争。然而，氧气气氛对于石墨增长太大。虽然二氧化碳（CO_（2））在烃燃烧后产生，但在某些情况下，它可以是柔软浓郁的氧化剂。这里，我们在100％CO_（2）环境中显示石墨烯的直接生长，并观察其在绝缘基板的阶梯边缘上的逐层生长。直接生长可以具有不包括在其他常用方法上将石墨烯转移到绝缘基板上的必要过程的显着优点。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号