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首页> 外文期刊>American journal of applied sciences >ULTRA LOW POWER SINGLE EDGE TRIGGERED DELAY FLIP FLOP BASED SHIFT REGISTERS USING 10-NANOMETER CARBON NANO TUBE FIELD EFFECT TRANSISTOR | Science Publications
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ULTRA LOW POWER SINGLE EDGE TRIGGERED DELAY FLIP FLOP BASED SHIFT REGISTERS USING 10-NANOMETER CARBON NANO TUBE FIELD EFFECT TRANSISTOR | Science Publications

机译：超低功耗单边缘触发延迟触发器基于10纳米碳纳米管场效应晶体管的移位寄存器|科学出版物

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摘要

> Carbon Nano Tube Field Effect Transistor is currently considered as promising successor of Metal Oxide Semiconductor Field Effect Transistor. The scaling down of the Metal Oxide Semiconductor device faced serious limits like short channel effect, tunnelling through gate oxide layer, associated leakage currents and power dissipation when its dimension shrink down to 22 nanometer range. Further scaling of Metal Oxide Semiconductor Field Effect Transistor will result in performance degradation. In this study, an ultra low power Single Edge Triggered Delay Flip Flop and shift registers are designed using 10 nanometre Carbon Nano Tube Field Effect Transistor. The Carbon Nano Tube Field Effect Transistor is an efficient device to supplant the current Complementary Metal Oxide Semiconductor technology for its excellent electrical properties. The high electron and hole mobility of semiconductor nano tubes, their compatibility with high k gate dielectrics, enhanced electrostatics, reduced short channel effects and ability to readily form metal ohmic contacts make these miniaturized structures an ideal material for high performance, nanoscale transistors. To evaluate the performance of Ultra low power Single Edge Triggered Delay Flip Flop and shift registers using 10 nanometer Carbon Nano Tube Field Effect Transistor technology, the results are depicted by analyzing average power, delay, power delay product, rise time and fall time using HSPICE at 1GHz operating frequency.
机译： >碳纳米管场效应晶体管当前被认为是金属氧化物半导体场效应晶体管的承诺继承者。金属氧化物半导体器件的缩放朝下面对短沟道效果的严重限制，当其尺寸减少到22纳米范围时，通过栅极氧化物层，隧道隧穿，相关的漏电流和功耗。金属氧化物半导体场效应晶体管的进一步缩放将导致性能下降。在该研究中，使用10纳米碳纳米管场效应晶体管设计了超低功率单边缘触发延迟触发器和移位寄存器。碳纳米管场效应晶体管是一种有效的装置，用于提出电流互补金属氧化物半导体技术，以实现其优异的电气性能。半导体纳米管的高电子和空穴迁移率，它们与高k栅极电介质的相容性，增强的静电学，减少的短信道效应和容易形成金属欧姆触点的能力使得这些小型化结构是高性能纳米级晶体管的理想材料。为了评估超低功耗单边缘触发延迟触发器的性能，使用10纳米碳纳米管场效应晶体管技术，通过分析平均功率，延迟，功率延迟产品，使用HSPICE的延迟时间和下降时间来描绘结果处于1GHz的工作频率。

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