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Miniature Dual-Band Substrate Integrated Waveguide Slotted Antenna Array for Millimeter-Wave 5G Applications

机译:用于毫米波5G应用的微型双带基板集成波导开槽天线阵列

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A compact substrate integrated waveguide (SIW) antenna array that operates at 28?GHz and 38?GHz is proposed for fifth generation (5G) applications. The proposed array consists of four SIW cavities fabricated on one single layer of substrate. Each cavity implements a rhombic slot and a triangular-split-ring slot, resonating on TE101 and TE102 modes at 28?GHz and 38?GHz, respectively. In comparison with dual-band SIW antennas in the literature, the proposed configuration depicts a miniature footprint (28.7?×?30.8?mm2) without stacking substrates. To excite the four cavities with equal power, a broadband power divider that supports the propagation of TE10 mode is designed. Accordingly, the impedance bandwidths are 26.6–28.3?GHz and 36.8–38.9?GHz. The measured realized peak gain over the lower and higher bands is 9.3–10.9?dBi and 8.7–12.1?dBi, respectively. The measured half-power beam widths (HPBWs) at 28?GHz and 38?GHz are 20.7° and 15.0°, respectively. Considering these characteristics, including dual bands, high gain, narrow beam widths, miniaturization, and single layer, the proposed antenna array is a suitable candidate for millimeter-wave 5G communication systems with the flexibility in switching operating frequency bands against channel quality variations.
机译:紧凑型基板集成波导(SIW)天线阵列,其在28〜GHz和38?GHz上提出用于第五代(5G)应用。所提出的阵列由在一层基板上制造的四个SiW腔组成。每个腔体现一个菱形槽和三角形旋转环槽,分别在28≤GHz和38Ω的TE101和TE102模式上谐振。与文献中的双频SiW天线相比,所提出的配置描绘了不堆叠基板的微型占地面积(28.7?×30.8×30.8·mm2)。为了激发具有相同电源的四个空腔,设计了一种支持TE10模式传播的宽带功率分频器。因此,阻抗带宽为26.6-28.3?GHz和36.8-38.9?GHz。测量的较高频段的实现峰值增益分别为9.3-10.9?dbi和8.7-12.1?dbi。测量的半功率束宽度(HPBW)分别为28≤GHz和38≤GHz分别为20.7°和15.0°。考虑到这些特性,包括双带,高增益,窄光束宽度,小型化和单层,所提出的天线阵列是毫米波5G通信系统的合适候选者,其具有用于对信道质量变化的开关工作频带的灵活性。

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