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首页> 外文期刊>International Journal of Electrochemical Science >One-Step Electrodeposition of CuZnSn Metal Alloy Precursor Film Followed by the Synthesis of Cu2ZnSnS4 and Cu2ZnSnSe4 Light Absorber Films and Heterojunction Devices
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One-Step Electrodeposition of CuZnSn Metal Alloy Precursor Film Followed by the Synthesis of Cu2ZnSnS4 and Cu2ZnSnSe4 Light Absorber Films and Heterojunction Devices

机译：Cuznsn金属合金前体膜的一步电沉积，然后用Cu 2 ZnSns 4 和Cu 2 znsnse 4 光吸收膜和异质结装置

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CuZnSn metallic alloy precursor films were electrodeposited on Mo substrate from a Zn-rich bath solution yielding low deposition rates. The precursor films were converted to photovoltaic absorber films of Cu2ZnSnS4 and Cu2ZnSnSe4 by sulfurization and selenization processes. X-ray diffraction, Raman spectroscopy and photocurrent spectroscopy techniques were utilized for the identification of films. The surface morphology, uniformity and compactness of the films were examined by scanning electron microscopy. The precursor and absorber films had a uniform and compact structure. The precursor films were composed from the Cu3Sn, Cu6Sn5 and Cu5Zn8 phases and their grain size varied tightly with the cathode potential. The conversion of precursor films to Cu2ZnSnS4 and Cu2ZnSnSe4 were verified from the results of their X-ray diffraction, Raman shifts, and optical transition energies. To assess the device quality of the absorber films, CdS/Cu2ZnSnS4 and CdS/Cu2ZnSnSe4 heterojunction diodes were fabricated and their device parameters were determined. The diodes showed relatively good ideality factor of 1.3-1.9, current rectification factor of ~120, and reverse biased saturation current of ~30-60 μA/cm2. Photocurrent spectroscopy was utilized to evaluate the band gap energy and other optical transition energies of the absorber films from the short-circuit photocurrent of the diodes.
机译：Cuznsn金属合金前体膜从富含Zn的浴溶液中电沉积在Mo底物上，得到低沉积速率。通过硫化和硒化方法将前体膜转化为Cu2ZnSNS4和Cu2ZNSNSE4的光伏吸收膜。 X射线衍射，拉曼光谱和光电流光谱技术用于鉴定薄膜。通过扫描电子显微镜检查膜的表面形态，均匀性和紧凑性。前体和吸收膜具有均匀和紧凑的结构。前体膜由Cu3Sn，Cu6Sn5和Cu5ZN8相组成，并且它们的晶粒尺寸与阴极电位紧密变化。从其X射线衍射，拉曼偏移和光学过渡能量的结果验证前体膜与Cu2ZNSS4和Cu2ZNSNSE4的转化。为了评估吸收膜的器件质量，制造CDS / Cu2ZNS4和Cds / Cu2zNSNSe4异质结二极管，并确定其器件参数。二极管显示出相对良好的理想因子为1.3-1.9，电流整流因子为〜120，反向偏置饱和电流为约30-60μA/ cm2。使用光电流光谱从二极管的短路光电流评估吸收膜的带隙能量和其他光学过渡能量。

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