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首页> 外文期刊>International Journal of Photoenergy >Origin of Difference in Photocatalytic Activity of ZnO (002) Grown on a- and c-Face Sapphire
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Origin of Difference in Photocatalytic Activity of ZnO (002) Grown on a- and c-Face Sapphire

机译：ZnO（002）的光催化活性差异的差异在A-和C面上蓝宝石上生长

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摘要

The oriented (002) ZnO films were grown on a- and c-face sapphire by pulsed laser deposition. The X-ray diffraction analysis revealed that the oriented (002) ZnO films were epitaxially grown on the substrate successfully. The sample on a-face sapphire had higher crystal quality. However, the photocatalytic activity for Rhodamine B degradation of ZnO film on c-face sapphire was higher than that on a-face sapphire. The Raman spectrum and XPS analysis suggested that the sample on a-face sapphire had higher concentration of defects. The result of the contact angle measurement revealed that the sample on c-face sapphire had higher surface energy. And the investigation of the surface conductance implied that the higher light conductance was helpful for the photocatalytic activity.
机译：通过脉冲激光沉积在A-和C面蓝宝石上生长所取向的（002）ZnO膜。 X射线衍射分析显示，取向（002）ZnO膜在基材上成功地外延生长。脸上的样品蓝宝石具有更高的晶体质量。然而，C形蓝宝石上ZnO膜降解的光催化活性高于脸上的蓝宝石。拉曼光谱和XPS分析表明，脸部蓝宝石上的样品具有更高的缺陷浓度。接触角测量的结果表明，C脸蓝宝石上的样品具有更高的表面能。并且对表面电导的研究暗示，较高的光电导有助于光催化活性。

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