Design consideration of high voltage Ga <ce:inf loc='post'>2</ce:inf>O <ce:inf loc='post'>3</ce:inf> vertical Schottky barrier diode with field plate

J.-H. Choi; C.-H. Cho; H.-Y. Cha

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Design consideration of high voltage Ga 2O 3 vertical Schottky barrier diode with field plate

机译：设计考虑高电压Ga 2 o 3 与现场板的垂直肖特基势垒二极管

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Gallium oxide (Ga2O3) based vertical Schottky barrier diodes (SBDs) were designed for high voltage switching applications. Since p-type Ga2O3epitaxy growth or p-type ion implantation technique has not been developed yet, a field plate structure was employed in this study to maximize the breakdown voltage by suppressing the electric field at the anode edge. TCAD simulation was used for the physical analysis of Ga2O3SBDs from which it was found that careful attention must be paid to the insulator under the field plate. Due to the extremely high breakdown field property of Ga2O3, an insulator with both high permittivity and high breakdown field must be used for the field plate formation.

机译：为高压开关应用设计了基于氧化镓（Ga2O3）的垂直肖特基势垒二极管（SBD）。由于尚未开发P型Ga2O3epitaxy生长或p型离子注入技术，因此在该研究中采用了场板结构，以通过抑制阳极边缘处的电场来最大化击穿电压。 TCAD模拟用于GA2O3SBD的物理分析，从中发现必须仔细关注现场板下的绝缘体。由于Ga2O3的极高击穿场特性，必须使用具有高介电常数和高击穿场的绝缘体用于现场板形成。

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《Results in Physics》 |2018年第60期|共2页
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J.-H. Choi; C.-H. Cho; H.-Y. Cha;
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Gallium oxideField plateBreakdown voltageHigh permittivitySchottky barrier diode;

机译：镓氧化野底板防爆电压高渗透率奇特屏障二极管;

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Design consideration of high voltage Ga 2O 3 vertical Schottky barrier diode with field plate

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