A possibility of formation of sandwich structures comprising of both DLC and nano-crystalline Ni-Carbon films on silicon substrate is presented. The influence of DLC film exposition to high temperature during preparation of Ni:C layers on its properties has been investigated by means of isochronal thermal annealing in carrying gas used. All structures obtained were examined by atomic force microscopy, scanning electron microscopy and X-ray photoelectron spectroscopy. It has been established that annealing leads to decrease of the internal residual stress in the DLC films as well as causes swelling of samples with temperature rise.The fraction of sp{3} hybridized bonds increases and the sp{2} fraction symmetrically decreases with increase of annealing temperature. The different sequences of growth processes to obtain DLC-Ni:c-DLC sandwich structure were investigated. The best way to get good structure quality is to grow initial DLC film at 200 V and 100 W and Ni:C layer at 500 °c.
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