• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>St. Petersburg Polytechnic University Journal: Physics and Mathematics >Near- and far-infrared emission from GaAs/AlGaAs quantum wells under interband optical excitation
【24h】

Near- and far-infrared emission from GaAs/AlGaAs quantum wells under interband optical excitation

机译：GaAs / Algaas量子孔的近乎红外线源于间带间光学激励

获取原文
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

The results of experimental studies of low-temperature impurity-assisted photoluminescence of n-dopedGaas/alGaas quantum well structures both in near- and far-infrared (terahertz) spectral ranges under interband optical excitation are presented. In the near-infrared photoluminescence spectra the opticalelectron transitions from the donor ground state to the hole subband are revealed. The depopulation of the impurity ground states due to these transitions allowed us to observe photoluminescence in terahertz spectralrange related to electron transitions from the first electron subband to the donor state as well as to intracenteroptical transitions. Experimental results in near- and far-infrared spectral ranges are well-consistent with the results on terahertz photoconductivity and theoretical calculations.
机译：呈现了在间带光激发的近端和远红外（太赫兹）光学激发下的低温杂质辅助光致发光的实验研究结果。在近红外光致发光光谱中，揭示了从供体接地状态到孔子带的光电电汇。由于这些转变，杂质地面状态的分布允许我们观察与来自第一电子子带与供体状态相关的电子转变相关的太赫兹光谱中的光致发光以及对主体光学转变。近乎和远红外光谱范围的实验结果与太赫兹光电导性和理论计算的结果良好。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号