Electronic transport in strained AlInGaAs/AlGaAs superlattices

Gerchikov Leonid G.; Mamaev Yuri A.; Yashin Yuri P.; Kuz’michev Vitaly V.; Aulenbacher Kurt; Riehn Erich

首页> 外文期刊>St. Petersburg Polytechnic University Journal: Physics and Mathematics >Electronic transport in strained AlInGaAs/AlGaAs superlattices

【24h】

Electronic transport in strained AlInGaAs/AlGaAs superlattices

机译：紧张的alingaas / Algaas Supertrices的电子传输

获取原文

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

Transport of spin polarized electrons in semiconductor alingaas/algaas superlattices (sl) with strained quantum wells used for photoemitter application is studied. The experimental study is based on the time resolved measurements of electron emission from the cathode after its photoexcitation by fs laser pulse. We report the variation of the sl response time with the number of superlattice periods. We have also performed theoretical calculations of photocathode pulse response and compared the obtained results with experimental data. Our analysis testifies the presence of partial electron localization in sl. We demonstrate that electron localization suppresses electronic transport and strongly limits the cathode quantum efficiency.

机译：研究了用于光电备用电器应用的旋转半导体Alingaas / Algaas超晶图（SL）中的自旋极化电子的运输。实验研究基于其在FS激光脉冲的光透镜后，基于阴极的电子发射的时间分辨率测量。我们以超晶格周期的数量报告SL响应时间的变化。我们还表现了光电阴极脉冲响应的理论计算，并将获得的结果与实验数据进行了比较。我们的分析证明了SL中的部分电子定位存在。我们证明电子定位抑制了电子传输并强烈限制了阴极量子效率。

著录项

来源
《St. Petersburg Polytechnic University Journal: Physics and Mathematics》 |2013年第4期|共10页
作者
Gerchikov Leonid G.; Mamaev Yuri A.; Yashin Yuri P.; Kuz’michev Vitaly V.; Aulenbacher Kurt; Riehn Erich;
展开▼
作者单位

展开▼
收录信息
原文格式 PDF
正文语种
中图分类
关键词
superlatticedfiffusionphotoemissionelectronic transport;

机译：SuperlatticedFiffusionPhotoemisionSelection Electronic Transport.;

相似文献

外文文献
中文文献
专利

1. Optimization of Optical Orientation and Electron Spin Transport in AlInGaAs/AlGaAs Superlattice [J] . Y. A. Mamaev, L. G. Gerchikov, Y. P. Yashin Journal of Superconductivity and Novel Magnetism . 2010,第1期

机译：AlInGaAs / AlGaAs超晶格中光学取向和电子自旋输运的优化
2. Low-threshold 840-nm laterally oxidized vertical-cavity lasers using AlInGaAs-AlGaAs strained active layers [J] . Ko J., Hegblom E.R. IEEE Photonics Technology Letters . 1997,第7期

机译：使用AlInGaAs-AlGaAs应变有源层的低阈值840 nm横向氧化垂直腔激光器
3. AlInGaAs/AlGaAs strained-layer 850 nm vertical-cavity lasers with very low thresholds [J] . Ko J., Hegblom E.R. Electronics Letters . 1997,第18期

机译：阈值极低的AlInGaAs / AlGaAs应变层850 nm垂直腔激光器
4. AlInGaAs/AlGaAs strained material and strained quantum well lasers grown by MBE [C] . Zun-Tu Xu, Institute of Semiconductors, Beijing Polytechnic U niv., . 1996

机译：MBE生长的AlInGaAs / AlGaAs应变材料和量子阱激光
5. Transport in Mid-Wavelength Infrared (MWIR) p- and n-Type InAsSb and InAs/InAsSb Type-II Strained Layer Superlattices (T2SLs) for Infrared Detection [D] . Casias, Lilian K. 2019

机译：在中波长红外线（MWIR）P-and N型INASSB和INAS / INASSB Type-II紧张层超大图格（T2SL）用于红外检测
6. Long-range and high-speed electronic spin-transport at a GaAs/AlGaAs semiconductor interface [O] . L. Nádvorník, P. Němec, T. Janda, -1

机译：GaAs / AlGaAs半导体接口处的远程高速电子自旋传输
7. Evaluation of GaAsSb/AlGaAs strained superlattice photocathodes [O] . Wei Liu, Yiqiao Chen, Aaron Moy, 2018

机译：高分辨率/ AlgaAs应变超晶格光电阴性的评估
8. AlInGaAs-AlGaAs Strained Single-Quantum-Well Diode Lasers [R] . Wang, C. A., Walpole, J. N., Choi, H. K., 1991

机译：alInGaas-alGaas应变单量子阱二极管激光器

Electronic transport in strained AlInGaAs/AlGaAs superlattices

摘要

著录项

相似文献

相关主题

期刊订阅