Degradation phenomena and the problem of semiconductor light emitting sources reliability

Sidorov Valery G.; Shmidt Natalia P.

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Degradation phenomena and the problem of semiconductor light emitting sources reliability

机译：劣化现象和半导体发光源可靠性的问题

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The degradation mechanisms in light emitting sources based on A3B5 semiconductors and also the peculiarities of degradation processes in light emitting sources based on InGaN/GaN structures have been reviewed. The problem of semiconductor light emitting sources reliability have been analyzed.

机译：基于A3B5半导体的发光源中的劣化机制以及基于Ingan / GaN结构的发光源中的降解过程的特性。分析了半导体发光源可靠性的问题。

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《St. Petersburg Polytechnic University Journal: Physics and Mathematics》 |2013年第2期|共10页
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Sidorov Valery G.; Shmidt Natalia P.;
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degradation mechanismsreliability light emitting sourcesInGaN/GaN structuresdislocationsinternal mechanical stresses;

机译：降解机制可靠性光发射Sourcesingan / GaN结构DislocationsInal机械应力;

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1. Charge carrier dynamics and degradation phenomena in organic light-emitting diodes doped by a thermally activated delayed fluorescence emitter [J] . Yutaka Noguchi, Hyung-Jun Kim, Ryuta Ishino, Organic Electronics . 2015,第feba期

机译：热激活延迟荧光发射器掺杂的有机发光二极管中的载流子动力学和降解现象
2. Fundamental characteristics of the illminating light source using white light-emitting diodes based on InGaN semiconductors [J] . Tetsushi Tamura, Tatsumi Setomoto, Tsunemasa Taguchi 電気学会論文誌. A . 2000,第2期

机译：使用基于InGaN半导体的白色发光二极管的照明光源的基本特性
3. Organic light-emitting diode lighting with high out-coupling and reliability: Application of transparent amorphous ZnO-SiO_2 semiconductor thick film [J] . Organic Electronics . 2017,第DECa期

机译：高耦合输出和可靠性的有机发光二极管照明：透明无定形ZnO-SiO_2半导体厚膜的应用
4. Degradation of light-emitting diodes on the basis of semiconductors of A3B5 by influence γ-irradiation [C] . Irkha V., Petrenko N., Markolenko P. Modern Problems of Radio Engineering, Telecommunications and Computer Science (TCSET'2010), 2010 . 2010

机译：影响γ射线对基于A3B5的半导体的发光二极管的降解
5. Native oxidation of aluminum-bearing III-V semiconductors with applications to edge- and surface-emitting lasers and to the stabilization of light emitting diodes. [D] . Richard, Timothy Allen. 1995

机译：含铝III-V半导体的自然氧化，可应用于边缘发射和表面发射激光器以及发光二极管的稳定化。
6. Light-emitting diodes: brighter NIR-emitting phosphor making light sources smarter [O] . Rong-Jun Xie 2020

机译：发光二极管：发光荧光荧光粉使光源更智能
7. Degradation Phenomena in Small-Molecule Organic Light-Emitting Devices [O] . -1

机译：小分子有机发光器件中的降解现象
8. Reliability Study of Opto-Coupled Semiconductor Devices and Light Emitting Diodes (Led) [R] . Maurer, R. C., Weissflug, V. A., Sisul, E. V. 1977

机译：光耦合半导体器件和发光二极管（Led）的可靠性研究

Degradation phenomena and the problem of semiconductor light emitting sources reliability

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