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首页> 外文期刊>Physical Review X >Fermi Surface Manipulation by External Magnetic Field Demonstrated for a Prototypical Ferromagnet
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Fermi Surface Manipulation by External Magnetic Field Demonstrated for a Prototypical Ferromagnet

机译：通过外部磁场进行外部磁场的Fermi表面操纵，用于原型的铁磁体

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We consider the details of the near-surface electronic band structure of a prototypical ferromagnet, Fe(001). Using high-resolution angle-resolved photoemission spectroscopy, we demonstrate openings of the spin-orbit-induced electronic band gaps near the Fermi level. The band gaps, and thus the Fermi surface, can be manipulated by changing the remanent magnetization direction. The effect is of the order of Δ E = 100 meV and Δ k = 0.1 ? ? 1 . We show that the observed dispersions are dominated by the bulk band structure. First-principles calculations and one-step photoemission calculations suggest that the effect is related to changes in the electronic ground state and not caused by the photoemission process itself. The symmetry of the effect indicates that the observed electronic bulk states are influenced by the presence of the surface, which might be understood as related to a Rashba-type effect. By pinpointing the regions in the electronic band structure where the switchable band gaps occur, we demonstrate the significance of spin-orbit interaction even for elements as light as 3 d ferromagnets. These results set a new paradigm for the investigations of spin-orbit effects in the spintronic materials. The same methodology could be used in the bottom-up design of the devices based on the switching of spin-orbit gaps such as electric-field control of magnetic anisotropy or tunneling anisotropic magnetoresistance.
机译：我们考虑了原型铁磁体，Fe（001）的近表面电子带结构的细节。使用高分辨率角度分辨的光曝光光谱，我们展示了旋转轨道诱导的电子频带间隙的开口，附近的费米水平。可以通过改变剩余磁化方向来操纵带间隙，从而进行操纵。效果是δe= 100mev和δk= 0.1的顺序？ ？ 1。我们表明观察到的分散体由散装带结构主导。第一原理计算和一步照片调查表明，效果与电子地面状态的变化有关，而不是由光曝气过程本身引起的。效果的对称表明观察到的电子散装状态受表面存在的影响，这可能被理解为与Rashba型效果有关。通过针对可切换带隙发生的电子频带结构中的区域进行定位，我们展示了旋转轨道交互的重要性，即使元素为光作为3d铁磁体。这些结果设定了一种新的范式，用于调查旋转材料中的旋转轨道效应。基于旋转轨道间隙的切换，例如诸如磁各向异性或隧道各向异性磁阻的电场控制，可以在设备的自下而上的设计中使用相同的方法。

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