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首页> 外文期刊>Physical Review X >Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β ? Ga 2 O 3
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Unusual Formation of Point-Defect Complexes in the Ultrawide-Band-Gap Semiconductor β ? Ga 2 O 3

机译：超法带间隙半导体β中缺陷复合物的异常形成？ GA 2 O 3

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Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of an unusual formation of point defect complexes within the atomic-scale structure of β ? Ga 2 O 3 using high resolution scanning transmission electron microscopy (STEM). Each complex involves one cation interstitial atom paired with two cation vacancies. These divacancy-interstitial complexes correlate directly with structures obtained by density functional theory, which predicts them to be compensating acceptors in β ? Ga 2 O 3 . This prediction is confirmed by a comparison between STEM data and deep level optical spectroscopy results, which reveals that these complexes correspond to a deep trap within the band gap, and that the development of the complexes is facilitated by Sn doping through increased vacancy concentration. These findings provide new insight on this emerging material’s unique response to the incorporation of impurities that can critically influence their properties.
机译：了解超宽带隙半导体的独特属性需要有关点缺陷的确切性质的详细信息及其在确定属性方面的作用。在这里，我们报告了第一次直接显微镜观察对β的原子尺度结构内的点缺陷复合物的不寻常形成？ Ga 2 O 3使用高分辨率扫描透射电子显微镜（Stem）。每个复合体都涉及一个阳离子间质原子与两个阳离子障碍配对。这些分析性间隙复合物直接与密度泛函理论获得的结构相关，这预测它们在β中补偿受体？ GA 2 O 3。通过茎数据和深层光谱分程的比较来确认该预测，这表明这些配合物对应于带隙内的深阱，并且通过Sn通过增加的空位浓度来促进络合物的发展。这些调查结果对这种新兴材料的独特反应提供了新的洞察，这对杂质融入其性质的杂质。

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