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首页> 外文期刊>Physical Review X >Spectroscopic Visualization of a Robust Electronic Response of Semiconducting Nanowires to Deposition of Superconducting Islands
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Spectroscopic Visualization of a Robust Electronic Response of Semiconducting Nanowires to Deposition of Superconducting Islands

机译：半导体纳米线的鲁棒电子响应的光谱可视化，以沉积超导岛

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Following significant progress in the visualization and characterization of Majorana end modes in hybrid systems of semiconducting nanowires and superconducting islands, much attention is devoted to the investigation of the electronic structure at the buried interface between the semiconductor and the superconductor. The properties of that interface and the structure of the electronic wave functions that occupy it determine the functionality and the topological nature of the superconducting state induced therein. Here we study this buried interface by performing spectroscopic mappings of superconducting aluminum islands epitaxially grown in?situ on indium arsenide nanowires. We find unexpected robustness of the hybrid system as the direct contact with the aluminum islands does not lead to any change in the chemical potential of the nanowires, nor does it induce a significant band bending in their vicinity. We attribute this to the presence of surface states bound to the facets of the nanowire. Such surface states, which are present also in bare nanowires prior to aluminum deposition, pin the Fermi level, thus rendering the nanowires resilient to surface perturbations. The aluminum islands further display Coulomb blockade gaps and peaks that signify the formation of a resistive tunneling barrier at the InAs-Al interface. The extracted interface resistivity, ρ ≈ 1.3 × 10 ? 6 Ω cm 2 , will allow us to proximity induce superconductivity with negligible Coulomb blockade effects by islands with interface area as small as 0.01 μ m 2 . At low energies we identify a potential energy barrier that further suppresses the transmittance through the interface. A corresponding barrier exists in bare semiconductors between surface states and the accumulation layer, induced to maintain charge neutrality. Our observations elucidate the delicate interplay between the resistive nature of the InAs-Al interface and the ability to proximitize superconductivity and tune the chemical potential in semiconductor-superconductor hybrid nanowires.
机译：在半导体纳米线和超导岛混合系统中的Majorana End模式的可视化和表征的显着进展之后，对半导体和超导体之间的掩埋界面的电子结构进行了大量关注。该接口的特性和占据其占据其的电子波函数的结构确定其中引起的超导状态的功能和拓扑性质。在这里，我们通过执行超导铝岛上外延生长的超导铝岛的光谱映射来研究这种掩埋界面。原位在铟砷纳米线上。我们发现混合系统的意外稳健性，因为与铝岛的直接接触不会导致纳米线的化学潜力的任何变化，也不是其附近弯曲的重要带弯曲。我们将这一点归因于存在与纳米线的刻面限定的表面状态。在铝沉积之前的裸纳米线中也存在这种表面状态，销钉细度，从而使纳米线的弹性变为表面扰动。铝群岛进一步展示库仑封锁间隙和峰值，表示在INAS-Al接口处形成电阻隧道屏障的形成。提取的界面电阻率，ρ≈1.3×10？ 6Ωcm2，将允许我们接近insolde inse inseSs的界面面积小至0.01μm2的忽略区封闭效应。在低能量下，我们识别通过界面进一步抑制透射率的潜在能量屏障。在表面状态和累积层之间的裸半导体中存在相应的屏障，其诱导以保持电荷中立性。我们的观察结果阐明了INAS-AL界面的电阻性质之间的微妙相互作用以及在半导体超导体杂交纳米线中调整化学电位的能力。

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