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Mixture of quantum dots and ZnS nanoparticles as emissive layer for improved quantum dots light emitting diodes

机译：量子点和ZnS纳米颗粒的混合物作为用于改进量子点发光二极管的发光层

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Recently, quantum dots based light-emitting diodes (QLEDs) have received huge attention due to the properties of quantum dots (QDs), such as high photoluminescence quantum yield (PLQY) and narrow emission. To improve the performance of QLEDs, reducing non-radiative energy transfer is critical. So far, most conventional methods required additional chemical treatment like giant shell and/or ligands exchange. However that triggers unsought shifted emission or reduced PLQY of QDs. In this work, we have firstly suggested a novel approach to improve the efficiency of QLEDs by introducing inorganic nanoparticles (NPs) spacer between QDs, without additional chemical treatment. As ZnS NPs formed a mixture layer with QDs, the energy transfer was reduced and the distance between the QDs increased, leading to improved PLQY of mixture layer. As a result, current efficiency (CE) of the QLED device was improved by twice compared with one using only QDs layer. This is an early report on utilizing ZnS NPs as an efficient spacer, which can be utilized to other compositions of QDs.
机译：最近，基于量子点的发光二极管（QLED）由于量子点（QDS）的性质，例如高光致发光量子产率（PLQY）和窄发射而受到巨大的关注。为了提高QLED的性能，降低非辐射能量转移至关重要。到目前为止，大多数常规方法需要额外的化学处理，如巨型壳和/或配体交换。然而，这触发了转移的发射或减少QDS的降低。在这项工作中，我们首先提出了一种新的方法来通过在QDS之间引入无机纳米颗粒（NPS）间隔物，而无需额外的化学处理，提高Q LEX的效率。随着ZnS NPS形成具有QD的混合层，减小了能量转移，并且QD之间的距离增加，导致混合层的改善的PLQY。结果，与仅使用QDS层的QD层相比，通过两次提高了QLED设备的电流效率（CE）。这是利用ZnS NP作为一种有效的垫片的早期报告，其可用于QD的其他组成。

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