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首页> 外文期刊>RSC Advances >Large bandgap quantum spin Hall insulator in methyl decorated plumbene monolayer: a first-principles study
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Large bandgap quantum spin Hall insulator in methyl decorated plumbene monolayer: a first-principles study

机译：大型带隙量子旋转霍尔绝缘体在甲基装饰普朗内斯单层：第一原理研究

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Topologically protected edge states of 2D quantum spin Hall (QSH) insulators have paved the way for dissipationless transport. In this regard, one of the key challenges is to find suitable QSH insulators with large bandgaps. Group IV analogues of graphene such as silicene, germanene, stanene, plumbene etc. are promising materials for QSH insulators. This is because their high spin–orbit coupling (SOC) and large bandgap opening may be possible by chemically decorating these group IV graphene analogues. However, finding suitable chemical groups for such decoration has always been a demanding task. In this work, we investigate the performance of a plumbene monolayer with –CX _(3) (X = H, F, Cl) chemical decoration and report very large bandgaps in the range of 0.8414 eV to 0.9818 eV with spin–orbit coupling, which is much higher compared to most other topological insulators and realizable at room temperature. The topological invariants of the samples are calculated to confirm their topologically nontrivial properties. The existence of edge states and topological nontrivial property are illustrated by investigating PbCX _(3) nanoribbons with zigzag edges. Lastly, the structural and electronic stability of the topological materials against strain are demonstrated to extend the scope of using these materials. Our findings suggest that these derivatives are promising materials for spintronic and future high performance nanoelectronic devices.
机译：2D Quantum Spin Hall（QSH）绝缘体的拓扑保护的边缘状态已经为折射运输铺平了道路。在这方面，关键挑战之一是找到具有大带隙的合适的QSH绝缘体。第四组石墨烯类似物，如硅，锗，苯二烯，铅丁烯等是QSH绝缘体的有希望的材料。这是因为可以通过化学装饰这些第四族石墨烯类似物来实现高自旋轨道耦合（SOC）和大的带隙开口。然而，为这种装饰寻找合适的化学基团一直是一个苛刻的任务。在这项工作中，我们调查钢板单层与-cx _（3）（x = h，f，cl）化学装饰的性能，并在0.8414eV的范围内报告自旋轨道耦合的0.9818eV的范围内的非常大的带隙，与大多数其他拓扑绝缘体相比，这要高得多，并在室温下可实现。计算样品的拓扑不变性以确认它们的拓扑非血管性质。通过用Z字形边缘研究PBCX _（3）纳米队来说明边缘状态和拓扑非血管性质。最后，证明了拓扑材料的结构和电子稳定性延长了使用这些材料的范围。我们的研究结果表明，这些衍生物是用于旋转和未来高性能纳米电子器件的有希望的材料。

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