• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Effects of 1,2-ethanedithiol concentration on performance improvement of quantum-dot LEDs
【24h】

Effects of 1,2-ethanedithiol concentration on performance improvement of quantum-dot LEDs

机译：1,2-乙二醇浓度对量子点LED性能改善的影响

获取原文
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We report systematic efficiency variations of green-emitting CdSe@ZnS quantum-dot (QD) LEDs (QLEDs) in response to in situ treatments with 1,2-ethanedithiol (EDT) solutions at various concentrations. The main effect of in situ EDT treatment on a QD layer spin-coated onto a ZnO layer was vacuum-level shift due to dipole moments on the surface of the QD layer and at the interface between QD and ZnO layers. Competing contributions of these dipole moments were responsible for changes in energy level configurations and, accordingly, electron and hole barriers that resulted in discrepancies in electron- and hole-current variations. QLED efficiency was best when treated with an EDT solution of 4 mM, attributable to the largest increase in the hole- to electron current ratio. The maximum luminous yield of the 4 mM EDT-treated QLED was 5.43 cd A ~(?1) , which is 10 times higher than that of an untreated device. Furthermore, the luminous yield of this treated device remained as high as 2.56 cd A ~(?1) at a luminance of 500 cd m ~(?2) .
机译：我们报告了绿色发光CDSE @ ZnS量子点（QD）LED（QD）的系统效率变化，响应于原位处理，以各种浓度为1,2-乙基二醇（EDT）溶液。原位EDT处理对旋涂到ZnO层上的QD层上的主要效果是由于QD层表面上的偶极矩和QD和ZnO层之间的界面而真空水平偏移。这些偶极矩的竞争贡献负责能级配置的变化，因此，电子和孔屏障导致电子和空穴电流变化的差异。当用4毫米的EDT溶液处理时，QLED效率最佳，可归因于孔至电子电流比的最大增加。 4 mm EDT处理的Q0的最大发光产率为5.43cd a〜（Δ1），比未处理装置的10倍。此外，该处理装置的发光产率在500cdm〜（α2）的亮度下保持高达2.56cd A〜（α1）。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号