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Enhanced charge storage properties of ultrananocrystalline diamond films by contact electrification-induced hydrogenation

机译：通过接触电气化诱导的氢化增强超混凝式金刚石膜的电荷储存性能

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摘要

We report the enhanced charge storage characteristics of ultrananocrystalline diamond (UNCD) by contact electrification-induced hydrogenation. The non-catalytic hydrogenation of UNCD films was achieved by using platinum as an electron donor and sulfuric acid as a hydrogen proton donor, confirmed by Raman spectroscopy and time-of-flight secondary ion mass spectroscopy (TOF-SIMS). Chemical treatment with only a H _(2) SO _(4) solution is responsible for the surface oxidation. The oxidation of UNCD resulted in an increase in the quantity and duration of the tribocharges. After non-catalytic hydrogenation, the generation of friction-induced tribocharges was enhanced and remained for three hours and more. We show that the hydrogen incorporation on grain boundaries is responsible for the improvement of charge storage capability, because the doped hydrogen acts as a trap site for the tribocharges. This lab-scale and succinct method can be utilized to control charge trap capability in nanoscale memory electronics.
机译：我们通过接触电动诱导的氢化报告超混晶金刚石（UNCL）的增强的电荷储存特性。通过使用铂作为电子供体和硫酸作为氢质子供体来实现非催化氢化，通过拉曼光谱和飞行时间二次离子质谱（TOF-SIM）来证实。仅具有H _（2）所以_（4）溶液的化学处理负责表面氧化。 UNC的氧化导致摩擦收缩的数量和持续时间增加。在非催化氢化后，增强了摩擦诱导的摩擦致摩擦谱的产生，保持了三小时等。我们表明，对晶粒边界的氢气掺入负责提高电荷储存能力，因为掺杂的氢气充当摩擦力的陷阱部位。该实验室规模和简洁方法可用于控制纳米级存储电子设备中的电荷陷阱能力。

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