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Investigation of the effect of S/In molar ratio on physical properties of sprayed In2S3 thin films

机译:S /摩尔比对喷涂IN2S3薄膜物理性质的影响研究

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Indium sulfide (In _(2) S _(3) ) thin films have been synthesized on glass substrates using the spray technique (CSP). The S?:?In molar ratio was varied from 1 to 4 in the starting solution. The Raman analysis confirms the formation of the β-In _(2) S _(3) material and the absence of a secondary phase. The EDS analysis reveals that our layers are pure. The thin film surface is free of cracks, as observed in AFM images. Optical transmission achieved 80% in the visible and near infrared region. The refractive index ( n ) is affected by the changes in the S/In molar ratio. The optical parameters, single oscillator energy ( E _(0) ), dispersion energy ( E _(d) ) and high frequency dielectric constant ( ε _(∞) ), are calculated via the Wemple–DiDomenico model. In addition, the photoconductivity kinetics in In _(2) S _(3) films for S/In = 2 were investigated and analyzed. The I – V characteristics and the photoresponse were also studied.
机译:使用喷雾技术(CSP)在玻璃基板上合成硫化铟(在_(2)S _(3))薄膜。 s?:摩尔比在起始溶液中的1至4中变化。拉曼分析证实了β-in _(2)S _(3)材料的形成以及不存在二次相。 EDS分析表明,我们的层是纯粹的。薄膜表面没有裂缝,如AFM图像中所观察到。光学传输在可见光和近红外区域中实现了80%。折射率(N)受S /摩尔比变化的影响。光学参数,单振荡能量(E _(0)),色散能量(E _(D))和高频介电常数(ε_(ε))通过Wemple-Didomenico模型计算。另外,研究并分析了S / In = 2的_(2)S _(3)膜中的光电导动脉学。还研究了I - V特性和光孔。

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