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首页> 外文期刊>RSC Advances >Influence of gamma-ray irradiation and post-annealing studies on pentacene films: the anisotropic effects on structural and electronic properties
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Influence of gamma-ray irradiation and post-annealing studies on pentacene films: the anisotropic effects on structural and electronic properties

机译：γ射线辐射和退火研究对五苯膜的影响：对结构和电子性质的各向异性作用

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In this work, γ-ray irradiation effects on pentacene thin films are investigated in terms of the change in the crystallinity, and electronic structure as well as chemical states of the film. The pentacene films are γ-irradiated up to 3 kGy and then characterized using synchrotron X-ray diffraction, near edge X-ray absorption fine structure (NEXAFS) and X-ray photoelectron spectroscopy. We found that γ-ray irradiation creates defects, resulting in a decrease of X-ray diffraction intensity both in the plane normal and in-plane directions. From angle dependent NEXAFS; the transition of C 1s to π* orbital for irradiated samples increases; suggesting that the unoccupied π* states enhance due to defects or radical formation in pentacene thin films. Additionally, the in-plane resistivity shows a decreasing trend of resistance after irradiation. This trend of increase in conductivity is also consistent with C 1s to π transition, which manifests the increase in carrier concentration. Hall effect measurements further confirmed the increase in carrier concentration as a function of dose; however, the mobility of the sample decreases as the dose rate increases due to the defects created. By post-irradiation annealing, the thin film phase diffraction intensity can be recovered. Altogether, the anisotropic studies on pentacene films disclosed that the irradiation leads to defect formation along in-plane and plane normal directions. Overall, these results suggest that pentacene is one of the robust organic electronic materials; whose structure remains mostly intact even after irradiation up to a dose of 3 kGy.
机译：在这项工作中，在结晶度的变化和电子结构以及薄膜的化学状态方面研究了对五苯薄膜的γ射线照射效应。五苯膜照射高达3kGy，然后使用同步X射线衍射，近边缘X射线吸收细结构（NEXAFS）和X射线光电子谱进行表征。我们发现γ射线照射产生缺陷，导致在平面正常和面内方向上的X射线衍射强度降低。从角度依赖的nexafs;辐照样品的C 1s至π*轨道的转变增加;表明，由于五烯薄膜的缺陷或自由基形成，未占用的π*态增强。另外，面内电阻率显示出辐照后的抵抗力趋势。这种导电性增加的趋势也与C 1S转变一致，这表明载体浓度的增加。霍尔效应测量进一步证实了作为剂量的函数的载体浓度的增加;然而，随着剂量率由于所产生的缺陷而增加，样品的迁移率降低。通过后照射退火，可以回收薄膜相衍射强度。总共，关于五苯膜的各向异性研究公开了辐射导致沿着平面内和平面正常方向的缺陷形成。总体而言，这些结果表明五偏的有机电子材料之一;即使在照射到3 kgy的剂量后，谁的结构也仍然是完整的。

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