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首页> 外文期刊>RSC Advances >Design of a p–n heterojunction in 0D/3D MoS2/g-C3N4 composite for boosting the efficient separation of photogenerated carriers with enhanced visible-light-driven H2 evolution
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Design of a p–n heterojunction in 0D/3D MoS2/g-C3N4 composite for boosting the efficient separation of photogenerated carriers with enhanced visible-light-driven H2 evolution

机译：0D / 3D MOS2 / G-C3N4复合材料P-N异质结的设计，用于提高增强的可见光驱动的H2进化的光生载流子有效分离

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Constructing a 0D/3D p–n heterojunction is a feasible strategy for accelerating photo-induced charge separation and promoting photocatalytic H _(2) production. In this study, a 0D/3D MoS _(2) /g-C _(3) N _(4) (0D/3D-MCN) photocatalyst with a p–n heterojunction was prepared via a facile light-assisted deposition procedure, and the 3D spongy-like g-C _(3) N _(4) (3D-CN) was synthesized through simple thermolysis of NH _(4) Cl and melamine mixture. For comparison, 2D-MoS _(2) nanosheets were also embedded in 3D-CN by a solution impregnation method to synthesize a 2D/3D-MCN photocatalyst. As a result, the as-prepared 0D/3D-MCN-3.5% composite containing 3.5 wt% 0D-MoS _(2) QDs exhibited the highest photocatalytic H _(2) evolution rate of 817.1 μmol h ~(?1) g ~(?1) , which was 1.9 and 19.4 times higher than that of 2D/3D-MCN-5% (containing 5 wt% 2D-MoS _(2) nanosheets) and 3D-CN, respectively. The results of XPS and electrochemical tests confirmed that a p–n heterojunction was formed in the 0D/3D-MCN-3.5% composite, which could accelerate the electron and hole movement in the opposite direction and retard their recombination; however, it was not found in 2D/3D-MCN-5%. This study revealed the relationship among the morphologies of MoS _(2) using g-C _(3) N _(4) as a substrate, the formation of a p–n heterojunction, and the H _(2) evolution activity; and provided further insights into fabricating a 3D g-C _(3) N _(4) -based photocatalyst with a p–n heterojunction for photocatalytic H _(2) evolution.
机译：构造0D / 3D P-N异质结是加速光诱导电荷分离和促进光催化H _（2）的生产的可行策略。在该研究中，通过容易辅助沉积过程制备具有AP-N异质结的0d / 3d MOS _（2）/ gc _（3）光催化剂，并通过容易辅助沉积过程制备通过NH _（4）Cl和三聚氰胺混合物的简单热解合成3D海绵状GC _（3）N _（4）（3D-CN）。为了比较，通过溶液浸渍方法在3D-CN中嵌入2D-MOS _（2）纳米片以合成2D / 3D-MCN光催化剂。结果，含有3.5wt％0d-MOS _（2）QD的AS制备的0d / 3D-MCN-3.5％复合材料显示出817.1μmolH〜（2）的最高光催化H _（2）进化率为817.1μmolH〜（？1）g 〜（α1）分别高于2D / 3D-MCN-5％的1.9和19.4倍（含有5wt％2D-MOS _（2）纳米片）和3D-CN。 XPS和电化学测试的结果证实，在0D / 3D-MCN-3.5％复合材料中形成了P-N异质结，其可以在相反方向上加速电子和空穴运动并延缓它们的重组;但是，它未在2D / 3D-MCN-5％中找到。本研究揭示了使用G-C _（3）N _（4）作为基材的MOS _（2）的形态的关系，形成P-N异质结，H_（2）进化活性;并提供进一步的见解，以制造基于3D G-C _（3）N _（4）的光催化剂，其用P-N异质结为光催化H _（2）进化。

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