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首页> 外文期刊>RSC Advances >Intrinsically stretchable all-carbon-nanotube transistors with styrene–ethylene–butylene–styrene as gate dielectrics integrated by photolithography-based process
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Intrinsically stretchable all-carbon-nanotube transistors with styrene–ethylene–butylene–styrene as gate dielectrics integrated by photolithography-based process

机译：具有苯乙烯 - 乙烯 - 丁烯 - 苯乙烯的本质上拉伸的全碳 - 纳米管晶体管作为基于光刻的工艺集成的栅极电介质

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摘要

In recent years, stretchable electronics have attracted great attention because of their broad application prospects such as in the field of wearable electronics, skin-like electronics, medical transplantation and human–machine interaction. Intrinsically stretchable transistors have advantages in many aspects. However, integration of intrinsically stretchable layers to achieve stretchable transistors is still challenging. In this work, we combine the excellent electrical and mechanical properties of carbon nanotubes with excellent dielectric and mechanical properties of styrene–ethylene–butylene–styrene (SEBS) to realize intrinsically stretchable thin film transistors (TFTs). This is the first time that all the intrinsically stretchable components have been combined to realize multiple stretchable TFTs in a batch by photolithography-based process. In this process, a plasma resistant layer has been introduced to protect the SEBS dielectric from being damaged during the etching process so that the integration can be achieved. The highly stretchable transistors show a high carrier mobility of up to 10.45 cm ~(2) V ~(?1) s ~(?1) . The mobility maintains 2.01 cm ~(2) V ~(?1) s ~(?1) even after the transistors are stretched by over 50% for more than 500 times. Moreover, the transistors have been scaled to channel length and width of 56 μm and 20 μm, respectively, which have a higher integration level. The stretchable transistors have light transmittance of up to 60% in the visible range. The proposed method provides an optional solution to large-scale integration for stretchable electronics.
机译：近年来，由于其广泛的应用前景，如可穿戴电子产品，皮肤等电子，医疗移植和人机相互作用，可伸展的电子产品引起了极大的关注。本质上可拉伸的晶体管在许多方面具有优势。然而，本质上拉伸层实现可拉伸晶体管的整合仍然具有挑战性。在这项工作中，我们将碳纳米管的优异电气和力学性能与苯乙烯 - 乙烯 - 丁烯 - 苯乙烯（SEBS）的优异介电和力学性能相结合，实现了本质上可拉伸的薄膜晶体管（TFT）。这是首次组合所有本质上拉伸部件以通过基于光刻的方法在批次中实现多个可拉伸的TFT。在该过程中，已经引入了等离子体抗性层以保护SEBS电介质在蚀刻过程中被损坏，从而可以实现整合。高度可拉伸的晶体管显示出高达10.45cm〜（2）V〜（α1）〜（α1）的高载流子迁移率。即使在晶体管被拉伸超过500倍以上，移动性也维持2.01cm〜（2）V〜（α1）S〜（Δ1）。此外，晶体管分别缩放到通道长度和宽度为56μm和20μm，其具有更高的积分水平。可拉伸晶体管在可见范围内具有高达60％的透光率。该方法为可伸缩电子设备提供了一种可选的大规模集成解决方案。

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