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Review of recent advances in inorganic photoresists

机译：综述无机光致抗蚀剂近期进步

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The semiconductor industry has witnessed a continuous decrease in the size of logic, memory and other computer chip components since its birth over half a century ago. The shrinking of features has to a large extent been enabled by the development of advanced photolithographic techniques. This review focuses on one important component of lithography, the resist, which is essentially a thin film that can generate a specific feature after an exposure and development process. Smaller features require an even more precisely focused photon, electron or ion beam with which to expose the resist. The promising light source for next generation lithography that will enable downscaling patterns to be written is extreme ultraviolet radiation (EUV), 92 eV (13.5 nm). The review mainly focuses on inorganic resists, as they have several advantages compared with traditional organic resists. In order to satisfy the throughput requirement in high volume semiconductor manufacturing, metal oxide resists with high resolution and sensitivity have been proposed and developed for EUV lithography. The progress of various inorganic resists is introduced and their properties have been summarized.
机译：半导体行业目睹了逻辑，内存和其他计算机芯片组件的大小连续减少，以来在半个世纪以上的出生以来。通过开发先进的光刻技术，特征的缩小必须在很大程度上实现。本综述重点介绍光刻，抗蚀剂的一个重要组成部分，这基本上是可以在暴露和开发过程之后产生特定特征的薄膜。较小的特征需要更精确聚焦的光子，电子或离子束，用于暴露抗蚀剂。下一代光刻的有希望的光源，使得待写的缩小图案是极端的紫外线辐射（EUV），92eV（13.5nm）。审查主要集中在无机抗蚀剂上，因为与传统有机抗蚀剂相比，它们具有几个优点。为了满足高批量半导体制造中的产量要求，已经提出了高分辨率和灵敏度的金属氧化物抗蚀剂，并为EUV光刻开发。介绍了各种无机抗蚀剂的进展，并总结了它们的性质。

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