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Ni-mediated reactions in nanocrystalline diamond on Si substrates: the role of the oxide barrier

机译:Ni介导在Si底物上纳米晶金刚石中的反应:氧化物屏障的作用

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Nanocrystalline diamond (NCD) films grown on Si substrates by microwave plasma enhanced chemical vapor deposition (MWPECVD) were subjected to Ni-mediated graphitization to cover them with a conductive layer. Results of transmission electron microscopy including electron energy-loss spectroscopy of cross-sectional samples demonstrate that the oxide layer on Si substrates (~5 nm native SiO _(2) ) has been damaged by microwave plasma during the early stage of NCD growth. During the heat treatment for graphitizing the NCD layer, the permeability or absence of the oxide barrier allow Ni nanoparticles to diffuse into the Si substrate and cause additional solid-state reactions producing pyramidal crystals of NiSi _(2) and SiC nanocrystals. The latter are found impinged into the NiSi _(2) pyramids but only when the interfacial oxide layer is absent, replaced by amorphous SiC. The complex phase morphology of the samples is also reflected in the temperature dependence of electrical conductivity, where multiple pathways of the electronic transport dominate in different temperature regions. We present models explaining the observed cascade of solid-state reactions and resulting electronic transport properties of such heterostructures.
机译:通过微波等离子体增强化学气相沉积(MWPECVD)在Si底物上生长的纳米晶金刚石(NCD)膜进行Ni介导的石墨化以用导电层覆盖它们。透射电子显微镜的结果包括横截面样本的电子能损光谱表明,在NCD生长的早期微波血浆中,Si衬底上的氧化物层(〜5nm天然SiO_(2))被损坏。在用于将NCD层的石墨化的热处理期间,氧化物屏障的渗透性或不存在允许Ni纳米颗粒扩散到Si底物中并导致产生NISI _(2)和SiC纳米晶体的金字塔晶体的额外固态反应。后者被发现进入NISI _(2)金字塔,但仅当不存在界面氧化物层时,由无定形SiC取代。样品的复杂相形态也反映在导电性的温度依赖性中,其中电子传输的多种途径在不同的温度区域中支配。我们提出了观察到的固态反应级联的模型,并产生了这种异质结构的电子传输性能。

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