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首页> 外文期刊>RSC Advances >Effects of Mo back-contact annealing on surface potential and carrier transport in Cu2ZnSnS4 thin?film solar cells
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Effects of Mo back-contact annealing on surface potential and carrier transport in Cu2ZnSnS4 thin?film solar cells

机译：Mo背接触退火对Cu2zNSNS4薄膜太阳能电池表面电位和载流子的影响

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The effects of Na on Cu _(2) ZnSnS _(4) (CZTS)-based solar cells have been examined with respect to surface potential and carrier transport. The Mo back-contact was annealed in a furnace for 10 minutes under a nitrogen atmosphere at different temperatures and CZTS thin films were subsequently grown by sputtering and sulfurization. The thickness of MoS _(2) , formed during the sulfurization process, decreased as the Mo annealing temperature increased. Interestingly, the Na contents diffused from soda lime glass has increased as well. The current and surface potential near CZTS grain boundaries were investigated by Kelvin probe force microscopy (KPFM) and conductive atomic force microscopy (C-AFM) were used. Surface current increased with increasing annealing temperature and surface potential increased up to approximately 50 mV near GBs, which led to inhibition of electron–hole recombination and an increase in minority carrier collection near GBs. This observation explains the improvement of solar cell open circuit voltage ( V _(OC) ) and current density ( J _(SC) ).
机译：关于表面电位和载体运输，已经检查了Na对Cu _（2）ZnSN _（4）（CZT）基于太阳能电池的影响。在不同温度下的氮气氛下在炉中退火Mo背触点10分钟，随后通过溅射和硫化而产生CZTS薄膜。在硫化过程中形成的MOS _（2）的厚度随着MO退火温度的增加而降低。有趣的是，从苏打石灰玻璃扩散的Na内容也增加了。通过开尔文探针力学显微镜（KPFM）研究了CZTS晶界附近的电流和表面电位，并使用导电原子力显微镜（C-AFM）。表面电流随着退火温度的增加而增加，表面电位高达约50mV的GBS，这导致了电子 - 空穴重组和GBS附近的少数载体收集的增加。该观察说明太阳能电池开路电压（V _（oc））和电流密度（J _（SC））的改进。

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