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Enhanced photoelectrical performance of chemically processed SnS2 nanoplates

机译：增强化学加工的SNS2纳米板的光电性能

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In this work, tin disulfide (SnS _(2) ) nanoplates have been synthesized through a facile hydrothermal method. The structural and morphological properties of SnS _(2) were investigated via scanning electron microscopy (SEM) which actually revealed the nanoplates like morphology of the obtained samples. Heterojunction diodes comprising SnS _(2) nanoplates and p-type silicon (Si) were fabricated and been demonstrated. Their electrical properties were studied using current–voltage characteristics and impedance spectroscopy. The diodes were found to exhibit excellent rectifying behavior with significant increase in reverse current under illumination. Impedance results identified the resistance of the device to reduce considerably under light irradiation. The enhanced photoelectrical properties of the heterojunctions were actually promoted by the electric field at the heterojunction interface, which further results with the effective separation of photogenerated electron hole pairs. The obtained results also suggest the potential of chemically processed SnS _(2) nanoplates for applications in photodetection and sensors applications.
机译：在这项工作中，通过容易的水热法合成了二硫化锡（SNS _（2））纳米层。通过扫描电子显微镜（SEM）研究了SNS _（2）的结构和形态学性质，该扫描电子显微镜（SEM）实际上揭示了所得样品的形态等形态。制造并证明了包含SNS _（2）纳米板和P型硅（Si）的异质结二极管。使用电流 - 电压特性和阻抗光谱研究其电气性能。发现二极管表现出优异的整流行为，在照明下具有显着增加的反向电流。阻抗结果确定了装置的电阻在光照照射下显着降低。异质结的增强的光电性能通过异质结界面处的电场促进，其进一步通过有效分离光发化的电子孔对。所得结果还提出了化学加工的SNS _（2）纳米板用于光检测和传感器应用的应用。

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