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Reversible P–N transition sensing behavior obtained by applying GQDs/Pt decorated SnO2 thin films at room temperature

机译:通过在室温下施加GQDS / PT装饰SnO2薄膜而获得的可逆P-N转变感测行为

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In this work, a GQDs/Pt decorated nanoporous SnO _(2) thin film with high crystallinity and nanostructure ordering is firstly fabricated in situ on a sensor device using water vapor hydrothermal treatment which then acted as an excellent acetone chemiresistor. Intriguingly, the nanoporous SnO _(2) thin film displays a regular change of sensing behavior with reversible transition from p- to n-type sensing as a function of acetone concentration (AC) and GQD content (GC) at room temperature. An AC–GC transition diagram has been created in terms of the gas sensing response. Accordingly, this will be a promising way to finding a versatile sensor system, by the precise control of the GQDs content on the SnO _(2) surface. The mechanism deriving from the acetone sensing transitions points out the nature of the materials.
机译:在这项工作中,首先在使用水蒸气水热处理的传感器装置上原位制造具有高结晶度和纳米结构顺序的GQDS / PT纳米多孔SnO _(2)薄膜。然后用作优异的丙酮化学体。有趣的是,纳米多孔SnO _(2)薄膜显示在室温下作为丙酮浓度(AC)和GQD含量(GC)的函数,通过P-T至N型感测的可逆转变进行常规变化。已经在气体传感响应方面创建了AC-GC转换图。因此,这将是寻找通用传感器系统的有希望的方式,通过对SnO _(2)表面上的GQDS内容的精确控制。源自丙酮感测过渡的机制指出了材料的性质。

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