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Spatial control of direct chemical vapor deposition of graphene on silicon dioxide by directional copper dewetting

机译：通过方向铜脱模对石墨烯直接化学气相沉积的空间控制

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In this paper we present a method for the spatial control of direct graphene synthesis onto silicon dioxide by controlled dewetting. The dewetting process is controlled through a combination of using a grooved substrate and conducting copper deposition at an angle. The substrate is then treated using a typical graphene chemical vapor deposition synthesis process at an elevated temperature during which directional dewetting of the copper into the grooves occurs while graphene is deposited at the mesas in between the grooves. The dewetting process and the synthesized graphene layer are characterized. The method is a non-manual, controllable and wafer-scale process, and therefore opens new possibilities for the construction of functional devices such as e.g. transistors.
机译：本文通过受控脱模介绍了一种用于通过受控脱模在二氧化硅上进行直接石墨烯合成的方法。通过使用带槽基板的组合来控制脱模过程并以一定角度传导铜沉积。然后在升高的温度下使用典型的石墨烯化学气相沉积合成工艺处理基材，在升高的温度下发生铜的定向脱模，同时将石墨烯沉积在凹槽之间的凹槽处。表征脱水过程和合成的石墨烯层。该方法是非手动，可控和晶片刻度的过程，因此开辟了施工功能装置的新可能性，例如例如，晶体管。

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