• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Substrate-dependent resistance decrease of graphene by ultraviolet-ozone charge doping
【24h】

Substrate-dependent resistance decrease of graphene by ultraviolet-ozone charge doping

机译：通过紫外线电荷掺杂将石墨烯的基板依赖性电阻降低

获取原文
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Large sheet resistance is the critical problem of graphene for application in electronic and optoelectronic devices as transparent electrodes. Ultraviolet/ozone (UVO) treatment is a convenient, highly effective, vacuum process and post-clean free method. This paper reveals that the effect of UVO treatment on the resistance of graphene is substrate dependent, which means that the band gap and photogenerated charge carriers of the substrates under UV illumination play a key role in the doping effect. The resistance of graphene can be decreased by as much as 80% on F8BT, GaN and PTFE substrates, by 70% on PMMA substrate, and by 50% on paraffin and glass substrates. Large band gap substrates (> hν ) will induce a p-doping effect, while small band gap substrates (< hν ) with plenty of photogenerated free charge carriers will induce n-doping effect. This approach will have great impact on the practical application of graphene in electronic and optoelectronic device fabrication.
机译：大薄层电阻是石墨烯的关键问题，用于电子和光电器件作为透明电极。紫外/臭氧（UVO）处理是一种方便，高效，真空工艺和清洁的自由方法。本文揭示了UVO治疗对石墨烯的电阻的影响是基板依赖性的，这意味着在紫外线照明下的基板的带隙和光静电载体在掺杂效果中起着关键作用。石墨烯的电阻可以在F8BT，GaN和PTFE底物上减少多达80％，在PMMA基板上达70％，并在石蜡和玻璃基板上达到50％。大带间隙基材（>Hν）将诱导p掺杂效果，而具有大量光发生的游离电量载体的小带隙基材（

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号