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Construction of Ag-doped Zn–In–S quantum dots toward white LEDs and 3D luminescent patterning

机译：朝向白光LED和3D发光图案的Ag掺杂Zn-S量子点的构建

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In this work, green-luminescent Ag-doped Zn–In–S quantum dots (Ag:Zn–In–S d-QDs) were successfully synthesized in oleylamine media with dodecanethiol via a one-pot noninjection synthetic strategy. The effect of Ag-doping concentration, reaction temperature, and reaction time on the photoluminescence (PL) properties of Ag:Zn–In–S d-QDs were systematically investigated. It is verified that green fluorescence of Ag:Zn–In–S d-QDs originates from the successful doping of Ag into the Zn–In–S host nanocrystals. ZnS shell was further coated on d-QDs to provide effective passivation, significantly improving the PL quantum yield from 7 to 28%. Then we employed 3D printing technology to achieve versatile low toxic fluorescent patterns towards anticounterfeit and optoelectronic applications for the first time. Also, Ag:Zn–In–S/ZnS d-QDs, as green phosphors, were used to fabricate a high-quality white light-emitting diode with a color rendering index of 90.3.
机译：在这项工作中，通过单盆性非印象综合策略在Oxylamine培养基中成功地合成了绿色发光Ag掺杂的Zn-In-S量子点（AG：Zn-IN-S D-QDS）。 Ag的掺杂浓度，反应温度和反应时间对Ag的光致发光（PL）性质的影响，系统地研究了Ag：Zn-IN-S的D-QD。验证了AG的绿色荧光：Zn-In-S D-QD源于Ag的成功掺杂到Zn-S宿主纳米晶体中。 ZnS壳进一步涂覆在D-QD上以提供有效的钝化，显着改善Pl量子产率从7〜28％。然后我们使用3D印刷技术，首次实现了对抗抵押品和光电应用的多功能低毒性荧光图案。此外，AG：Zn-In-S / ZnS D-QDS，作为绿色磷光体，用于制造高质量的白色发光二极管，具有90.3的显色指数。

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