• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>RSC Advances >Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures
【24h】

Reliable resistive switching memory based on oxygen-vacancy-controlled bilayer structures

机译：基于氧空型控制双层结构的可靠电阻开关存储器

获取原文
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

We fabricated resistive random access memory (RRAM) devices composed of a bilayer of AlO _( x ) . The AlO _( x ) layer was synthesized by atomic layer deposition (ALD) with different oxidizer sources. To control the number of oxygen vacancies, we used water and ozone as the oxidizer sources in ALD. The AlO _( x ) layer synthesized using water as the oxidizer source (AlO _( x ) (water)) contained more oxygen vacancies than the AlO _( x ) layer deposited using ozone as the oxidizer (AlO _( x ) (ozone)). We fabricated memory devices with a structure of Al/AlO _( x ) (water)/AlO _( x ) (ozone)/Pt by ALD. After the initial forming process the devices showed reproducible and reliable RRAM characteristics. Bipolar resistive change was observed in Al/AlO _( x ) (water)/AlO _( x ) (ozone)/Pt RRAM devices with low operation voltages of less than 1 V. Ohmic conduction behavior was dominant in the low resistance state and trap-controlled space-charge-limited conduction was observed in the high resistance state. The resistive switching is related to migration of oxygen vacancies and the formation/rupture of conductive filaments. Oxygen vacancies formed conductive filaments when an electric field was applied, and Joule heating broke them. The reliability of the devices was confirmed by data retention and endurance tests. The reliable bipolar resistive switching properties are attributed to a stable conductive filament in the AlO _( x ) (water) layer and partial connection/disruption of a conductive filament localized at the AlO _( x ) (ozone) layer.
机译：我们制造了由alo _（x）的双层组成的电阻随机存取存储器（RRAM）器件。通过用不同的氧化剂来源通过原子层沉积（ALD）合成ALO _（X）层。为了控制氧空位的数量，我们用水和臭氧作为ALD中的氧化剂来源。使用水作为氧化剂源（AlO _（x）（水））合成的AlO _（x）层比使用臭氧作为氧化剂的AlO _（x）层含有更多的氧空位（AlO _（x）（臭氧）））。我们通过AL / ALO _（X）（水）/ ALO _（X）（臭氧）/ PT的结构制造了内存装置。在初始形成过程之后，器件显示可重复和可靠的RRAM特性。在al / alo _（x）（水）/ alo _（x）（臭氧）/ alo _（x）（臭氧）/ pt RRAM器件中观察到双极电阻变化，低于1V的低于1 V.欧姆传导行为在低电阻状态下显着在高电阻状态下观察到捕集控制的空间电荷限制导通。电阻切换与氧气空位的迁移有关，以及导电长丝的形成/破裂。当施加电场时，氧气空位形成导电细丝，焦耳加热突破它们。通过数据保留和耐久性测试确认了设备的可靠性。可靠的双极电阻切换性能归因于AlO _（X）层中的稳定导电灯丝，以及在ALO _（X）层（臭氧）层上定位的导电灯丝的部分连接/破坏。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号