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Synthesis of porous silicon through interfacial reactions and measurement of its electrochemical response using cyclic voltammetry

机译：通过循环伏安法通过界面反应合成其电化学响应的互晶反应和测量

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Porous silicon, an excellent material with fascinating physical and chemical properties, is usually formed by anodic polarization of single crystalline silicon in HF based solutions. Here, we show fabrication of porous silicon films ～0.5–250 μm thick consisting of macropores and mesopores using a contactless electrochemical approach, where the silicon substrate is not under any external bias. Pore dimensions and porosity have been characterized by scanning electron microscopy (SEM) while subsequent cyclic voltammetry (CV) investigations delineate the underlying topographical differences between blanket and porous silicon surfaces. Our work not only offers a new scalable means of fabricating porous silicon structures but also questions the reliability of existing theories that depend on localized collection of electronic hole carriers through anodization of silicon for pore formation. We believe our results will open pathways for development of realistic models for porous silicon formation.
机译：多孔硅，具有迷人物理和化学性质的优异材料，通常通过基于HF的溶液中的单晶硅的阳极偏振来形成。这里，我们展示了由非接触式电化学方法组成的多孔硅膜〜0.5-250μm厚的多孔硅膜厚度和中孔，其中硅衬底不在任何外部偏压下。通过扫描电子显微镜（SEM），在随后的循环伏安（CV）研究中表征了孔径和孔隙率，而覆盖橡皮布和多孔硅表面之间的潜在地形差异。我们的工作不仅提供了一种制造多孔硅结构的新可扩展方法，还提供了现有理论的可靠性，这取决于通过硅阳极氧化阳极氧化孔形成的局部电池载体的局部收集。我们相信我们的结果将开放开发多孔硅形成现实模型的途径。

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