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首页> 外文期刊>RSC Advances >Stable negative differential resistance in porphyrin based σ–π–σ monolayers grafted on silicon
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Stable negative differential resistance in porphyrin based σ–π–σ monolayers grafted on silicon

机译：基于卟啉的脉冲σ-π-Σ单层在硅中稳定的负差分性

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摘要

Two Si-based hybrid self-assembled monolayers were synthesized by electro-grafting two di- O -alkylated porphyrins as the σ–π–σ systems. The monolayers showed a stable and reversible negative differential resistance (NDR) property at room temperature. The monolayer, fabricated using the porphyrin with fluorophenyl groups was more compact and showed a tenfold peak-to-valley ratio (PVR) relative to the other similar system devoid of the fluorine atoms in the porphyrin moiety. This suggested better pre-organization of the former, possibly by hydrogen bonding through the electro-negative fluorine atoms.
机译：通过将两种 - 烷基化的卟啉作为Σ-π-ΣSystems进行电接枝，合成两个基于Si的混合动力单体层。单层在室温下显示出稳定且可逆的负差分耐受（NDR）性能。用氟苯基制造的单层制造的单层更紧凑，相对于卟啉部分中氟原子缺乏氟原子的其他类似体系表示十倍峰峰 - 谷比（PVR）。这提出了更好的前者预先组织前者，可能是通过电阴氟原子氢键合。

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