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Micropatterning of nanoenergetic films of Bi2O3/Al for pyrotechnics

机译:烟火Bi2O3 / Al纳米植物微型薄膜

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Initiatives have been led by researchers all around the world to deposit and pattern nanoenergetic films (nEFs) using various techniques so that printed energetic circuits can be developed for initiation of detonation. In the first stage of a similar initiative, Bi _(2) O _(3) nano-square tablets (NSTs) with an edge length of ca. 200–300 nm and thickness of ca. 50–100 nm were synthesized on gold-sputtered silicon substrates by a chemical bath deposition process. Gold nanofilms on Si-substrates were found to act as catalytic agents for stable colloidal growth of Bi _(2) O _(3) NSTs. In the absence of a gold catalyst, micro-leaf-shaped structures of Bi _(2) O _(3) were observed to form using the same process. The developed Bi _(2) O _(3) NSTs were sputter-coated with aluminum to produce nEFs on the Si-substrate. The exothermic reactivity of Bi _(2) O _(3) /Al nEFs was evaluated at three different aluminum-sputtering thicknesses of 60, 100 and 140 nm, respectively, by TG-DSC measurements taken from 50 to 800 °C at a heating rate of 10 °C min ~(?1) under nitrogen. The nEF formed with 140 nm aluminum sputtering developed the highest heat of reaction, 710 J g ~(?1) , at an initiation temperature of 535 °C; when burnt in a constant-volume pressure-cell, this nEF developed a peak pressure of 40.8 MPa and a pressurization rate of 4.08 MPa μs ~(?1) . Furthermore, it was possible to pattern the Bi _(2) O _(3) /Al nEFs on Si-substrates up to a resolution of ~5 microns. The high heat of reaction, low initiation temperature and excellent pressure–time characteristics of the nEFs, and their high-resolution micropatterning on Si-substrates make them useful for pyrotechnics.
机译:世界各地的研究人员都领导的倡议是使用各种技术存放和模式纳米膜(NEFS),以便可以开发印刷的能量电路以启动爆炸。在类似概率的第一阶段,Bi _(2)O _(3)纳米方形片(第N个),具有CA的边缘长度。 200-300纳米和CA厚度。通过化学浴沉积工艺在金溅射的硅基衬底上合成50-100nm。发现Si-衬底上的金纳纤维作为催化剂,用于Bi _(2)O _(3)NSTS的稳定胶体生长。在没有金色催化剂的情况下,观察到Bi _(2)o _(3)的微叶形结构以使用相同的方法形成。发达的BI _(2)O _(3)NSTS用铝溅射涂覆,以在Si-基板上产生NEF。通过从50至800℃的TG-DSC测量分别在60,100和140nm的三种不同的铝溅射厚度下评估Bi _(2)O _(3)/ Al Nefs的放热反应性。在氮气下加热速率为10°C min〜(?1)。用140nm铝溅射形成的NEF显影了最高的反应热量,710 J G〜(α1),在535°C的起始温度下;当燃烧在恒定体积压力细胞中时,该NEF在40.8MPa的峰值压力和4.08MPaμs的加压速率开发出峰值压力〜(?1)。此外,可以将Si-基板上的Bi _(2)O _(3)/ Al NEF达到〜5微米的分辨率。在SI-衬底上的反应高热量,低启动温度和优异的NEF的压力 - 时特性,以及它们的SI-基板上的高分辨率微图案使它们可用于烟火。

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