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首页> 外文期刊>Scientific reports. >Characterization of nitrogen doped graphene bilayers synthesized by fast, low temperature microwave plasma-enhanced chemical vapour deposition
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Characterization of nitrogen doped graphene bilayers synthesized by fast, low temperature microwave plasma-enhanced chemical vapour deposition

机译：快速，低温微波等离子体增强化学气相沉积合成的氮掺杂石墨烯双层的表征

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New techniques to manipulate the electronic properties of few layer 2D materials, unveiling new physical phenomena as well as possibilities for new device applications have brought renewed interest to these systems. Therefore, the quest for reproducible methods for the large scale synthesis, as well as the manipulation, characterization and deeper understanding of these structures is a very active field of research. We here report the production of nitrogen doped bilayer graphene in a fast single step (2.5 minutes), at reduced temperatures (760?°C) using microwave plasma-enhanced chemical vapor deposition (MW-PECVD). Raman spectroscopy confirmed that nitrogen-doped bilayer structures were produced by this method. XPS analysis showed that we achieved control of the concentration of nitrogen dopants incorporated into the final samples. We have performed state of the art parameter-free simulations to investigate the cause of an unexpected splitting of the XPS signal as the concentration of nitrogen defects increased. We show that this splitting is due to the formation of interlayer bonds mediated by nitrogen defects on the layers of the material. The occurrence of these bonds may result in very specific electronic and mechanical properties of the bilayer structures.
机译：操纵少数二层材料的电子特性的新技术，揭示新的物理现象以及新设备应用的可能性已经为这些系统带来了更新的兴趣。因此，寻求用于大规模合成的可再现方法，以及对这些结构的操纵，表征和更深入的理解是一个非常活跃的研究领域。我们在此报告使用微波等离子体增强的化学气相沉积（MW-PECVD）在快速单步（2.5分钟）中在快速单步（2.5分钟）中产生氮掺杂双层石墨烯的生产。拉曼光谱证实通过该方法产生氮掺杂双层结构。 XPS分析表明，我们实现了控制掺入最终样品中的氮掺杂剂浓度的控制。我们已经执行了最新的无参数模拟，以研究XPS信号的意外分裂的原因，因为氮缺陷的浓度增加。我们表明该分裂是由于在材料层层上介导的氮缺陷介导的层间键。这些键的发生可能导致双层结构的非常特异性的电子和机械性能。

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